74HCT157
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3
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±50 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(SOIC or TSSOP Package) 260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 4.5 5.5 V
V
in
, V
out
DC Input Voltage, Output Voltage
(Referenced to GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types – 55 + 125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
V
CC
(V)
Guaranteed Limit
Symbol Parameter Condition −55 to 25°C ≤85°C ≤125°C Unit
V
IH
Minimum High−Level Input Voltage V
out
= 0.1V
|I
out
| ≤ 20mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
V
IL
Maximum Low−Level Input Voltage V
out
= V
CC
− 0.1V
|I
out
| ≤ 20mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IL
|I
out
| ≤ 20mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
in
= V
IL
|I
out
| ≤ 4.0mA 4.5 3.98 3.84 3.70
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IH
|I
out
| ≤ 20mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
|I
out
| ≤ 4.0mA 4.5 0.26 0.33 0.40
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 5.5 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0mA
5.5 4.0 40 40
mA
DI
CC
Additional Quiescent Supply
Current
V
in
= 2.4V, Any One Input
V
in
= V
CC
or GND, Other Inputs
I
out
= 0mA
5.5
≥ −55°C 25 to 125°C
mA
2.9 2.4
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I
CC
+ ΣDI
CC
.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
