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SUD50N025-06P-E3

P1-P3P4-P6P7-P7
FEATURES
D TrenchFETr Power MOSFET
D 100% R
g
Tested
D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, Low-Side
− Desktop PC
SUD50N025-06P
Vishay Siliconix
New Product
Document Number: 73349
S-50934—Rev. A, 09-May-05
www.vishay.com
1
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
a,
e
Q
g
(Typ)
25
0.0062 @ V
GS
= 10 V 78
20 5 nC
25
0.010 @ V
GS
= 4.5 V 62
20
.
5
n
C
N-Channel MOSFET
G
D
S
Ordering Information: SUD50N025-06P—E3 (Lead (Pb)-Free)
TO-252
SGD
Top View
Drain Connected to Tab
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
25
V
Gate-Source Voltage V
GS
"20
V
T
C
= 25_C
78
a,
e
Continuous Drain Current (T
J
= 175
_
C)
T
C
= 70_C
I
D
65
a,
e
Continuous Drain Current (T
J
= 175_C)
T
A
= 25_C
I
D
32
b,
c
T
A
= 70_C
25
b,
c
A
Pulsed Drain Current I
DM
100
A
Continuous Source Drain Diode Current
T
C
= 25_C
I
S
43
Continuous Source-Drain Diode Current
T
A
= 25_C
I
S
7.1
b,
c
Avalanche Current Pulse
L = 0 1 mH
I
AS
35
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
61.25 mJ
T
C
= 25_C
65
a
Maximum Power Dissipation
T
C
= 70_C
P
D
45
a
W
Maximum Power Dissipation
T
A
= 25_C
P
D
10.7
b,
c
W
T
A
= 70_C
7.5
b,
c
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b,
d
t p 10 sec R
thJA
11 14
_C/W
Maximum Junction-to-Case Steady State R
thJC
1.9 2.3
_C/W
Notes:
a. Based on T
C
= 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 90 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
SUD50N025-06P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73349
S-50934—Rev. A, 09-May-05
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 mA
25 V
V
DS
Temperature Coefficient
DV
DS
/T
J
I
D
= 250 mA
20
mV/
_
C
V
GS(th)
Temperature Coefficient
DV
GS(th)
/T
J
I
D
= 250 mA
−5.5
m
V/_C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1.4 2.4 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
Zero Gate Voltage Drain Current
V
DS
= 25 V, V
GS
= 0 V 1
mA
Z
ero
G
a
t
e
V
o
lt
age
D
ra
i
n
C
urren
t
DSS
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55_C
10
m
A
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V
50 A
Drain
-
Source On
-
State Resistance
a
V
GS
= 10 V, I
D
= 20 A
0.0051 0.0062
W
Drain
-
So
u
rce On
-
State Resistance
a
DS(on)
V
GS
= 4.5 V, I
D
= 15 A 0.0081 0.010
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A 55 S
Dynamic
b
Input Capacitance C
iss
2490
Output Capacitance C
oss
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz 530
pF
Reverse Transfer Capacitance C
rss
280
Total Gate Charge
V
DS
= 12 V, V
GS
= 10 V, I
D
= 50 A 44 66
T
o
t
a
l G
a
t
e
Ch
arge
g
20.5 31
nC
Gate-Source Charge Q
gs
V
DS
= 12 V, V
GS
= 4.5 V, I
D
= 50 A 7.5
n
C
Gate-Drain Charge Q
gd
7.0
Gate Resistance R
g
f = 1 MHz 0.55 1.1 1.65
W
Turn-On Delay Time t
d(on)
19 28
Rise Time t
r
V
DD
= 12 V, R
L
= 0.24 W
12 18
Turn-Off Delay Time t
d(off)
V
DD
= 12 V
,
R
L
= 0
.
24 W
I
D
^ 50 A, V
GEN
= 4.5 V, R
g
= 1 W
18 27
Fall Time t
f
7 11
ns
Turn-On Delay Time t
d(on)
9 14
ns
Rise Time t
r
V
DD
= 12 V, R
L
= 0.24 W
11 16.5
Turn-Off Delay Time t
d(off)
V
DD
= 12 V
,
R
L
= 0
.
24 W
I
D
^ 50 A, V
GEN
= 10 V, R
g
= 1 W
24 36
Fall Time t
f
8 12
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25_C
43
A
Pulse Diode Forward Current
a
I
SM
100
A
Body Diode Voltage V
SD
I
S
= 30 A
0.9 1.5 V
Body Diode Reverse Recovery Time t
rr
30 45 ns
Body Diode Reverse Recovery Charge Q
rr
I
F
= 20 A di/dt = 100 A/ms T
J
= 25
_
C
20 30 nC
Reverse Recovery Fall Time t
a
I
F
=
20 A
,
di/dt
=
100 A/
ms,
T
J
=
25_C
13.5
ns
Reverse Recovery Rise Time t
b
16.5
ns
Notes
a. Pulse test; pulse width v
300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SUD50N025-06P
Vishay Siliconix
New Product
Document Number: 73349
S-50934—Rev. A, 09-May-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.004
0.008
0.012
0.016
0.020
0 20406080100
0
2
4
6
8
10
0 1020304050
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150 175
0
400
800
1200
1600
2000
2400
2800
3200
0 5 10 15 20 25
C
rss
C
oss
C
iss
I
D
= 50 A
V
GS
= 10 V
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current and Gate Voltage
− Gate-to-Source Voltage (V)
Q
g
− Total Gate Charge (nC)
V
DS
− Drain-to-Source Voltage (V)
C − Capacitance (pF)
V
GS
I
D
− Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
− Junction Temperature (_C)
V
GS
= 4.5 V
r
DS(on)
− On-Resiistance
(Normalized)
0
4
8
12
16
20
1.0 1.5 2.0 2.5 3.0 3.5
0
20
40
60
80
100
0.0 0.4 0.8 1.2 1.6 2.0
V
GS
= 10 thru 5 V
25_C
T
C
= 125_C
−55_C
3 V
Output Characteristics Transfer Characteristics
V
DS
− Drain-to-Source Voltage (V)
− Drain Current (A)I
D
V
GS
− Gate-to-Source Voltage (V)
− Drain Current (A)I
D
r
DS(on)
− On-Resistance (mW)
V
DS
= 12 V
V
GS
= 4.5 V
I
D
= 20 A
V
DS
= 18 V
4 V
2 V
P1-P3P4-P6P7-P7

SUD50N025-06P-E3

Mfr. #:
Buy SUD50N025-06P-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 25V 78A 65W
Lifecycle:
New from this manufacturer.
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