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SUD50N025-06P-E3

P1-P3P4-P6P7-P7
SUD50N025-06P
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73349
S-50934—Rev. A, 09-May-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
2345678910
1.0 1.2
0.001
10
100
0.00 0.2 0.4 0.6 0.8
T
J
= 25_C
T
J
= 150_C
Source-Drain Diode Forward Voltage
V
SD
− Source-to-Drain Voltage (V)
− Source Current (A)I
S
I
D
= 20 A
On-Resistance vs. Gate-to-Source Voltage
V
GS
− Gate-to-Source Voltage (V)
−1.2
−0.9
−0.6
−0.3
0.0
0.3
0.6
−50 −25 0 25 50 75 100 125 150 175
I
D
= 250 mA
Threshold Voltage
T
J
− Temperature (_C)
0
480
720
120
240
Power (W)
Time (sec)
600
10 10000.10.010.001
Single Pulse Power, Junction-to-Ambient
r
DS(on)
− Drain-to-Source On-Resistance (W)
V
GS(th)
(V)
T
J
= 25_C
T
J
= 125_C
1
0.1
0.01
T
A
= 25_C
360
1001
Safe Operating Area, Junction-to-Case
1000
10
0.1 1 10 100
0.1
100
− Drain Current (A)I
D
1
1 ms
T
C
= 25_C
Single Pulse
10 ms
100 ms, dc
*Limited by r
DS(on)
V
DS
− Drain-to-Source Voltage (V)
*V
GS
u minimum V
GS
at which r
DS(on)
is specified
10 ms
100 ms
SUD50N025-06P
Vishay Siliconix
New Product
Document Number: 73349
S-50934—Rev. A, 09-May-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
1
0.00001 0.001 0.1 1
0.1
0.0001
0
15
30
45
60
75
90
0 25 50 75 100 125 150 175
Current De-Rating*
I
D
− Drain Current (A)
T
C
− Case Temperature (_C)
T
A
− Time In Avalanche (sec)
Single Pulse Avalanche Capability
I
C
− Peak Avalanche Current (A)
*The power dissipation P
D
is based on T
J(max)
= 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
T
A
+
L @ I
D
BV * V
DD
0.01
Package Limited
0
10
20
30
40
50
60
70
25 50 75 100 125 150 175
Power De-Rating
T
C
− Case Temperature (_C)
Power
100
10
SUD50N025-06P
Vishay Siliconix
New Product
www.vishay.com
6
Document Number: 73349
S-50934—Rev. A, 09-May-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
−3
10
−2
1 10 60010
−1
10
−4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
− T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
−3
10
−2
11010
−1
10
−4
2
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
0.05
0.02
Single Pulse
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73349.
P1-P3P4-P6P7-P7

SUD50N025-06P-E3

Mfr. #:
Buy SUD50N025-06P-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 25V 78A 65W
Lifecycle:
New from this manufacturer.
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