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NTHC5513T1G

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 5
1 Publication Order Number:
NTHC5513/D
NTHC5513
Power MOSFET
20 V, +3.9 A / −3.0 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low R
DS(on)
in a ChipFET Package for High Efficiency Performance
• Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
N−Ch
Steady
State
T
A
= 25°C
I
D
2.9
A
T
A
= 85°C 2.1
t v 5 T
A
= 25°C 3.9
P−Ch
Steady
State
T
A
= 25°C
I
D
−2.2
A
T
A
= 85°C −1.6
t v 5 T
A
= 25°C −3.0
Pulsed Drain Current
(Note 1)
N−Ch
t = 10 ms
I
DM
12
A
P−Ch
t = 10 ms
−9.0
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.1
W
t v 5 T
A
= 25°C 2.1
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G
D
S
N−Channel MOSFET
1
1
1
G
D
2
2
P−Channel MOSFET
S
2
Device Package Shipping
†
ORDERING INFORMATION
ChipFET
CASE 1206A
STYLE 2
1
2
3
45
6
7
8
PIN
CONNECTIONS
MARKING
DIAGRAM
C1M
G
C1 = Specific Device Code
M = Month Code
G = Pb−Free Package
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
www.onsemi.com
N−Channel
20 V
P−Channel
−20 V
80 mW @ 2.5 V
60 mW @ 4.5 V
130 mW @ −4.5 V
200 mW @ −2.5 V
R
DS(on)
TYP
3.9 A
−3.0 A
I
D
MAXV
(BR)DSS
NTHC5513T1G ChipFET
(Pb−Free)
3000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTHC5513
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient (Note 1)
Steady State
T
A
= 25°C
R
q
JA
110
°C/W
t v 5 60
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol N/P Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage
V
(BR)DSS
N
V
GS
= 0 V
I
D
= 250 mA
20
V
P
I
D
= −250 mA
−20
Zero Gate Voltage Drain Current I
DSS
N V
GS
= 0 V, V
DS
= 16 V 1.0 mA
P V
GS
= 0 V, V
DS
= −16 V −1.0
N V
GS
= 0 V, V
DS
= 16 V, T
J
= 85 °C 5
P V
GS
= 0 V, V
DS
= −16 V, T
J
= 85 °C −5
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
N
V
GS
= V
DS
I
D
= 250 mA
0.6 1.2
V
P
I
D
= −250 mA
−0.6 −1.2
Drain−to−Source On Resistance R
DS
(on)
N V
GS
= 4.5 V , I
D
= 2.9 A 0.058 0.080
W
P V
GS
= −4.5 V , I
D
= −2.2 A 0.130 0.155
N V
GS
= 2.5 V , I
D
= 2.3 A 0.077 0.115
P V
GS
= −2.5 V, I
D
= −1.7 A 0.200 0.240
Forward Transconductance g
FS
N V
DS
= 10 V, I
D
= 2.9A 6.0
S
P V
DS
= −10 V , I
D
= −2.2 A 6.0
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
N
f = 1 MHz, V
GS
= 0 V
V
DS
= 10 V 180
pF
P V
DS
= −10 V 185
Output Capacitance C
OSS
N V
DS
= 10 V 80
P V
DS
= −10 V 95
Reverse Transfer Capacitance C
RSS
N V
DS
= 10 V 25
P V
DS
= −10 V 30
Total Gate Charge Q
G(TOT)
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 2.6 4.0
nC
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −2.2 A 3.0 6.0
Gate−to−Source Gate Charge Q
GS
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 0.6
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −2.2 A 0.5
Gate−to−Drain “Miller” Charge Q
GD
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 0.7
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −2.2 A 0.9
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
NTHC5513
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol N/P Test Conditions Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
N
V
DD
= 16 V, V
GS
= 4.5 V, I
D
= 2.9 A,
R
G
= 2.5 W
5.0 10
ns
Rise Time t
r
9.0 18
Turn−Off Delay Time t
d(OFF)
10 20
Fall Time t
f
3.0 6.0
Turn−On Delay Time t
d(ON)
P
V
DD
= −16 V, V
GS
= −4.5 V, I
D
= −2.2 A,
R
G
= 2.5 W
7.0 12
Rise Time t
r
13 25
Turn−Off Delay Time t
d(OFF)
33 50
Fall Time t
f
27 40
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 5)
V
SD
N
V
GS
= 0 V
I
S
= 2.6 A 0.8 1.15
V
P I
S
= −2.1 A −0.8 −1.15
Reverse Recovery Time (Note 4) t
RR
N
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms
I
S
= 1.5 A 12.5
ns
P I
S
= −1.5 A 32
Charge Time t
a
N I
S
= 1.5 A 9.0
P I
S
= −1.5 A 10
Discharge Time t
b
N I
S
= 1.5 A 3.5
P I
S
= −1.5 A 22
Reverse Recovery Charge Q
RR
N I
S
= 1.5 A 6.0
nC
P I
S
= −1.5 A 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
5. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
P1-P3P4-P6P7-P9

NTHC5513T1G

Mfr. #:
Buy NTHC5513T1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V +3.9A/-3A Complementary
Lifecycle:
New from this manufacturer.
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