NTHC5513T1G

NTHC5513
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4
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
2 V
100°C
0
8
5
6
632
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
4
2
0
1
Figure 1. On−Region Characteristics
0
8
21.5 2.5
6
4
2
1
0
3
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
35
0.1
0.05
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
17
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.5
1.3
1.1
0.9
0.7
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.15
24
T
C
= −55°C
I
D
= 2.7 A
T
J
= 25°C
0.1
0.04
75 150
T
J
= 25°C
I
D
= 2.7 A
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.7
V
GS
= 4.5 V
16
24 8
1
2
0
16
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
1.4 V
1.6 V
1.8 V
V
GS
= 2.5 V
10
100
78
2.2 V
V
DS
10 V
35
0.07
610 1814
V
GS
= 2.4 V
V
GS
= 5 V to 3 V
910
0.5
0
NTHC5513
www.onsemi.com
5
TYPICAL N−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
DS
= 0 V V
GS
= 0 V
510 10
400
300
200
100
0
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C
OSS
C
ISS
C
RSS
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
101
10
1
100
R
G
, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t, TIME (ns)
V
DD
= 16 V
I
D
= 2.7 A
V
GS
= 4.5 V
100
50
t
d(OFF
)
t
d(ON)
t
f
t
r
V
GS
V
DS
15
0.9
3
0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
7
0.75
0.45
0.3
1
4
2
1.20.6 1.05
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.5 1 1.5 2 2.5 3
0
4
8
12
16
20
I
D
= 2.7 A
T
J
= 25°C
Q
G
Q
GD
Q
GS
NTHC5513
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6
TYPICAL P−CHANNEL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
−2 V
100°C
0
4
5
3
632
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
2
1
0
1
Figure 11. On−Region Characteristics
0.5
4
21.5 2.5
3
2
1
1
0
3
Figure 12. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
35
0.3
0.2
0
Figure 13. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
Figure 14. On−Resistance vs. Drain Current
and Gate Voltage
−I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 15. On−Resistance Variation with
Temperature
−T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.5
24
T
C
= −55°C
I
D
= −2.1 A
T
J
= 25°C
75 150
I
D
= −2.1 A
V
GS
= −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
−1.2 V
16
24 8
10
2
0
16
Figure 16. Drain−to−Source Leakage Current
vs. Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
−I
DSS
, LEAKAGE (A)
T
J
= 150°C
T
J
= 100°C
−1.4 V
−1.6 V
−1.8 V
100
1000
10000
78
−2.2 V
V
DS
−10 V
0.4
610 1814
V
GS
= −2.4 V
V
GS
= −6 V to −3 V
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0.5 1.5 2.5 3.5
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −2.5 V

NTHC5513T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V +3.9A/-3A Complementary
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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