Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-side loadswitch
High-speed line driver
Relay driver
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
amb
=25°C ---20V
V
GS
gate-source
voltage
-12 - 12 V
I
D
drain current V
GS
=-4.5V; T
amb
=2C
[1]
---3.5A
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=-4.5V; I
D
=-2.4A;
pulsed; t
p
300 µs; δ≤0.01;
T
j
=2C
- 4855m
PMV48XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 21 December 2010 2 of 15
NXP Semiconductors
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT23 (TO-236AB)
2Ssource
3 D drain
12
3
017aaa094
S
D
G
Table 3. Ordering information
Type number Package
Name Description Version
PMV48XP TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PMV48XP KN%

PMV48XP,215

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET P-CH -20 V -3.5 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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