PMV48XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 21 December 2010 8 of 15
NXP Semiconductors
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
V
DS
> I
D
× R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
I
D
= -0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V
GS
(V)
0.0 −3.0−2.0−1.0
017aaa132
−14
I
D
(A)
0
−2
−4
−6
−8
−10
−12
(1) (2)
(1)
(2)
T
j
(°C)
−60 180120060
017aaa133
1.0
0.5
1.5
2.0
a
0.0
T
j
(°C)
−60 180120060
017aaa134
−0.8
−0.4
−1.2
−1.6
V
GS(th)
(V)
0.0
(1)
(2)
(3)
V
DS
(V)
−10
−1
10
2
10−1
017aaa135
10
3
10
2
10
4
C
(pF)
10
(2)
(1)
(3)
