IRKH26/12A Datasheet IRKH26/14A, IRKH26/16A, IRKL26/04A | P1-P3

Parameters IRK.26 Units

I

T(AV)

or I

F(AV)

@ 85°C

I

O(RMS)

(*) 60 A

I

TSM

@ 50Hz 400 A

I

FSM

@ 60Hz 420 A

I

2

t @ 50Hz 800 A

2

s

@ 60Hz 730 A

2

s

I

2

√t 8000 A

2

√s

V

RRM

range 400 to 1600 V

T

STG

- 40 to 125

o

C

T

J

- 40 to125

o

C

(*) As AC switch.

27 A

Major Ratings and Characteristics

27 A

ADD-A-pak

TM

GEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

IRK.26 SERIES

Bulletin I27130 rev. G 10/02

1

www.irf.com

Features

High Voltage

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

UL E78996 approved

3500V

RMS

isolating voltage

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage of

Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a solid

Copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The Generation V of AAP module is manufactured without

hard mold, eliminating in this way any possible direct

stress on the leads.

Benefits

Up to 1600V

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al

2

0

3

DBC insulator

Heatsink grounded

Electrical Description

These modules are intended for general purpose

high voltage applications such as high voltage regu-

lated power supplies, lighting circuits, temperature

and motor speed control circuits, UPS and battery

charger.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop feature

already tested and proved as reliable on other IR modules.

IRK.26 Series

2

Bulletin I27130 rev. G 10/02

www.irf.com

V

RRM

, maximum V

RSM

, maximum V

DRM

, max. repetitive I

RRM

Voltage repetitive non-repetitive peak off-state voltage, I

DRM

Code peak reverse voltage peak reverse voltage gate open circuit 125°C

-VVVmA

04 400 500 400

06 600 700 600

08 800 900 800

IRK.26 10 1000 1100 1000 15

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

I

T(AV)

Max. average on-state

current (Thyristors) 27 180

o

conduction, half sine wave,

I

F(AV)

Max. average forward 27 T

C

= 85

o

C

current (Diodes)

I

O(RMS

)

Max. continuous RMS

on-state current.

As AC switch

I

TSM

Max. peak, one cycle 400 t=10ms No voltage

or non-repetitive on-state 420 t=8.3ms reapplied

I

FSM

or forward current 335 t=10ms 100% V

RRM

350 t=8.3ms reapplied

470 t=10ms T

J

= 25

o

C,

490 t=8.3ms no voltage reapplied

I

2

t Max. I

2

t for fusing 800 t=10ms No voltage

730 t=8.3ms reapplied

560 t=10ms 100% V

RRM

510 t=8.3ms reapplied

1100 t=10ms T

J

= 25

o

C,

1000 t=8.3ms no voltage reapplied

I

2

√t Max. I

2

√t for fusing (1) 8000 A

2

√s t= 0.1 to 10ms, no voltage reappl. T

J

=T

J

max

V

T(TO)

Max. value of threshold 0.92 Low level (3)

voltage (2) 0.95 High level (4)

r

t

Max. value of on-state 12.11 Low level (3)

slope resistance (2) 11.82 High level (4)

V

TM

Max. peak on-state or I

TM

= π x I

T(AV)

T

J

= 25

o

C

V

FM

forward voltage I

FM

= π x I

F(AV)

di/dt Max. non-repetitive rate T

J

= 25

o

C, from 0.67 V

DRM

,

of rise of turned on 150 A/µs I

TM

=π x I

T(AV)

, I

g

= 500mA,

current t

r

< 0.5 µs, t

p

> 6 µs

I

H

Max. holding current 200 T

J

= 25

o

C, anode supply = 6V,

resistive load, gate open circuit

I

L

Max. latching current 400 T

J

= 25

o

C, anode supply = 6V, resistive load

T

J

= T

J

max

T

J

= T

J

max

Parameters IRK.26 Units Conditions

60

(1) I

2

t for time t

x

= I

2

√t

x √t

x

(2) Average power = V

T(TO)

x I

T(AV)

+ r

t

x (I

T(RMS)

)

2

(3) 16.7% x π x I

AV

< I < π x I

AV

(4) I > π x I

AV

On-state Conduction

Initial T

J

= T

J

max.

A

2

s

V

mΩ

1.95 V

mA

or

I

(RMS)

I

(RMS)

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

Sinusoidal

half wave,

Initial T

J

= T

J

max.

IRK.26 Series

3

Bulletin I27130 rev. G 10/02

www.irf.com

T

J

Junction operating

temperature range

T

stg

Storage temp. range - 40 to 125

R

thJC

Max. internal thermal

resistance, junction 0.31 Per module, DC operation

to case

R

thCS

Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar 3

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

Thermal and Mechanical Specifications

Parameters IRK.26 Units Conditions

- 40 to 125

0.1

5

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.

°C

K/W

Nm

Mounting surface flat, smooth and greased

I

RRM

Max. peak reverse and

I

DRM

off-state leakage current 15 mA T

J

= 125

o

C, gate open circuit

at V

RRM

, V

DRM

V

INS

RMS isolation voltage 2500 (1 min) V 50 Hz, circuit to base, all terminals

3500 (1 sec) shorted

dv/dt Max. critical rate of rise 500 V/µsT

J

= 125

o

C, linear to 0.67 V

DRM

,

Triggering

Blocking

P

GM

Max. peak gate power 10

P

G(AV)

Max. average gate power 2.5

I

GM

Max. peak gate current 2.5 A

-V

GM

Max. peak negative

gate voltage

4.0 T

J

= - 40°C

2.5 T

J

= 25°C

1.7 T

J

= 125°C

270 T

J

= - 40°C

150 mA T

J

= 25°C

80 T

J

= 125°C

V

GD

Max. gate voltage

that will not trigger

I

GD

Max. gate current

that will not trigger

0.25 V

6mA

Anode supply = 6V

resistive load

V

GT

Max. gate voltage

required to trigger

Anode supply = 6V

resistive load

I

GT

Max. gate current

required to trigger

W

V

10

T

J

= 125

o

C,

rated V

DRM

applied

T

J

= 125

o

C,

rated V

DRM

applied

Parameters IRK. 26 Units Conditions

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the

spread of the compound

Sine half wave conduction Rect. wave conduction

Devices Units

180

o

120

o

90

o

60

o

30

o

180

o

120

o

90

o

60

o

30

o

IRK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

thJC

when devices operate at different conduction angles than DC)

IRKH26/12A

IRKH26/12A

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