IRK.26 Series
7
Bulletin I27130 rev. G 10/02
www.irf.com
Fig. 10 - On-state Voltage Drop Characteristics
1
10
100
1000
01234567
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
IRK.26.. Series
Per Junction
Fig. 12- Gate Characteristics
Fig. 11 - Thermal Impedance Z
thJC
Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Steady State Value:
R = 0.62 K/W
(DC Operation)
thJC
thJC
Transient Thermal Impedance Z (K/W)
IRK.26.. Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4)
(3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.26.. Series