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SI1411DH-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Si1411DH
www.vishay.com
Vishay Siliconix
S16-0887-Rev. D, 09-May-16
1
Document Number: 73242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 150 V (D-S) MOSFET
Marking Code: BG
Ordering Information:
Si1411DH-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFETS
• Small, thermally enhanced SC-70 package
• Ultra low on-resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Active clamp circuits in DC/DC power supplies
Note
a. Surface mounted on 1" x 1" FR4 board.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(TYP.)
-150
2.6 at V
GS
= -10 V -0.52
4.2 nC
2.7 at V
GS
= -6 V -0.51
SOT-363
SC-70 Single (6 leads)
Top View
1
D
2
D
3
G
D
6
D
5
S
4
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 5 s STEADY STATE UNIT
Drain-Source Voltage V
DS
-150
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
-0.52 -0.42
A
T
A
= 85 °C -0.38 -0.3
Pulsed Drain Current I
DM
-0.8
Continuous Diode Current (Diode Conduction)
a
I
S
-1.3 -0.83
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-2.1
Single Pulse Avalanche Energy E
AS
0.22 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.56 1
W
T
A
= 85 °C 0.81 0.52
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a
t 5 s
R
thJA
60 80
°C/WSteady State 100 125
Maximum Junction-to-Foot (Drain) Steady State R
thJF
34 45
Si1411DH
www.vishay.com
Vishay Siliconix
S16-0887-Rev. D, 09-May-16
2
Document Number: 73242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -100 μA -2.5 - -4.5 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -150 V, V
GS
= 0 V - - -1
μA
V
DS
= -150 V, V
GS
= 0 V, T
J
= 85 °C - - -5
On-State Drain Current
a
I
D(on)
V
DS
= -15 V, V
GS
= -10 V -0.8 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -0.5 A - 2.05 2.6
V
GS
= -6 V, I
D
= -0.5 A - 2.14 2.7
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -0.5 A - 1.5 - S
Diode Forward Voltage
a
V
SD
I
S
= -1.4 A, V
GS
= 0 V - -0.8 -1.1 V
Dynamic
b
Total Gate Charge Q
g
V
DS
= -75 V, V
GS
= -10 V, I
D
= -0.5 A
-4.26.3
nCGate-Source Charge Q
gs
-0.9-
Gate-Drain Charge Q
gd
-1.3-
Gate Resistance R
g
f = 1 MHz - 8.5 -
Turn-On Delay Time t
d(on)
V
DD
= -75 V, R
L
= 75
I
D
-1 A, V
GEN
= -4.5 V, R
g
= 6
-4.57
ns
Rise Time t
r
-1117
Turn-Off Delay Time t
d(off)
-914
Fall Time t
f
-1117
Reverse Recovery Time t
rr
I
F
= -0.5 A, dI/dt = 100 A/μs
-3655
Body Diode Reverse Recovery Charge Q
rr
- 65 100 nC
Si1411DH
www.vishay.com
Vishay Siliconix
S16-0887-Rev. D, 09-May-16
3
Document Number: 73242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0246810
V
GS
= 10 V thru 5 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
GS
= 10 V
-R
DS(on)
I
D
- Drain Current (A)
V
GS
= 6 V
0
2
4
6
8
10
0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2
V
DS
= 75 V
I
D
= 0.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
012345
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
50
100
150
200
250
0 30 60 90 120 150
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 0.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
P1-P3P4-P6P7-P9P10-P11

SI1411DH-T1-GE3

Mfr. #:
Buy SI1411DH-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -150V Vds 20V Vgs SC70-6
Lifecycle:
New from this manufacturer.
Delivery:
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