SI1411DH-T1-GE3

Si1411DH
www.vishay.com
Vishay Siliconix
S16-0887-Rev. D, 09-May-16
4
Document Number: 73242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
1.2 1.5
0.01
1
2
0 0.3 0.6 0.9
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.1
- 0.5
- 0.2
0.1
0.4
0.7
1.0
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
0
1
2
3
4
5
6
0246810
I
D
= 0.5 A
- On-Resistance ()R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
7
35
Power (W)
Time (s)
21
28
0.1 1010.010.001
14
T
A
= 25 °C
Single Pulse
1
0.1
0.1 10 1000
0.001
0.01
1
T
A
= 25 °C
Single Pulse
Limited by
R
DS(on)
*
1 ms
1 s, 10 s
100 s, DC
10 µs
100 µs
100
10 ms
100 ms
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specied
- Drain Current (A)
I
D
Si1411DH
www.vishay.com
Vishay Siliconix
S16-0887-Rev. D, 09-May-16
5
Document Number: 73242
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73242
.
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
L
c
E
E
1
e
D
e
1
A
2
A
A
1
1
-A-
b
-B-
23
654
Package Information
Vishay Siliconix
Document Number: 71154
06-Jul-01
www.vishay.com
1
SCĆ70: 6ĆLEADS
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A
0.90 1.10 0.035 0.043
A
1
0.10 0.004
A
2
0.80 1.00 0.031 0.039
b
0.15 0.30 0.006 0.012
c
0.10 0.25 0.004 0.010
D
1.80 2.00 2.20 0.071 0.079 0.087
E
1.80 2.10 2.40 0.071 0.083 0.094
E
1
1.15 1.25 1.35 0.045 0.049 0.053
e
0.65BSC 0.026BSC
e
1
1.20 1.30 1.40 0.047 0.051 0.055
L
0.10 0.20 0.30 0.004 0.008 0.012
7_Nom 7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550

SI1411DH-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -150V Vds 20V Vgs SC70-6
Lifecycle:
New from this manufacturer.
Delivery:
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