SiC645
www.vishay.com
Vishay Siliconix
S16-2233-Rev. B, 31-Oct-16
7
Document Number: 65424
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
(recommended operating conditions, unless otherwise noted. T
J
= -40 °C to +125 °C)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNIT
MIN.
a
TYP. MAX.
a
POWER RATING
Maximum instant power dissipation T
A
= 25 °C, 150 A
b
-100-
W
Maximum continuous power dissipation T
A
= 25 °C,
JA
= 10 °C/W, T
J
= 150 °C
b
- 12.5 -
THERMAL RESISTANCE
Thermal resistance junction to PCB
JB
b
-5.2-
°C/W
Thermal resistance junction to ambient
JA
0 LFM
b
- 10.7 -
400 LFM
b
-9.3-
V
CC
SUPPLY CURRENT
Logic standby current IV
CC
PWM = open - 4.75 - mA
Gate drive standby current IPV
CC
PWM = open - 100 - µA
Logic operational current IV
CC
PWM = 300 kHz - 4.75 -
mA
Gate drive operational current IPV
CC
PWM = 300 kHz - 15 -
POWER-ON RESET AND ENABLE
V
CC
rising POR threshold - 3.86 4.20
c
V
V
CC
falling POR threshold 3.20
c
3.58 -
V
CC
POR hysteresis -280-mV
V
CC
POR delay to operation - 125 197
c
µs
V
IN
rising POR threshold - 4 4.2
c
V
V
IN
falling POR threshold 3.4
c
3.5 -
V
IN
POR hysteresis -445-mV
3.3 V PWM INPUT (see “Timing Diagram”)
Sink impedance - 33.5 -
k
Source impedance - 16.5 -
Tri-state lower gate falling threshold
V
CC
= 5 V
-1.11-
V
Tri-state lower gate rising threshold - 0.87 -
Tri-state upper gate rising threshold - 2.13 -
Tri-state upper gate falling threshold - 1.95 -
Tri-state shutdown window 1.3
c
-1.8
c
5 V PWM INPUT (see “Timing Diagram”)
Sink impedance - 16.5 -
k
Source impedance - 16.5 -
Tri-state lower gate falling threshold
V
CC
= 5 V
-1.51-
V
Tri-state lower gate rising threshold - 1.14 -
Tri-state upper gate rising threshold - 3.24 -
Tri-state upper gate falling threshold - 3.02 -
Tri-state shutdown window 1.6
c
-2.8
c
SWITCHING TIME
GH turn-on propagation delay t
PDHU
GL low to GH high, see Fig. 6 - 8 -
ns
GH turn-off propagation delay t
PDLU
PWM low to GH low, see Fig. 6 - 40 -
GL turn-on propagation delay t
PDHL
GH low to GL high, see Fig. 6 - 8 -
GL turn-off propagation delay t
PDLL
PWM high to GL low, see Fig. 6 - 23 -
GL exit tri-state propagation delay t
PDTSL
Tri-state to GL high), see Fig. 6 - 25 -
GH exit tri-state propagation delay t
PDTSU
Tri-state to GH high, see Fig. 6 - 35 -
PWML tri-state shutdown hold-off time t
TSSHDL
PWM low to GL low, see Fig. 6 - 40 -
PWMH tri-state shutdown hold-off time t
TSSHDU
PWM low to GH low, see Fig. 6 - 50 -
SiC645
www.vishay.com
Vishay Siliconix
S16-2233-Rev. B, 31-Oct-16
8
Document Number: 65424
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
b. These ratings vary with PCB layout and operating condition, and limited by SPS temperature and thermal shutdown trip point.
c. Limits apply across the operating temperature range.
TIMING DIAGRAM
Fig. 6 - Timing Diagram
CURRENT MONITOR
IREF
IN
voltage range 0.8
c
1.2 1.6
c
V
IMON current gain accuracy (V
CC
= 5 V)
10 A, T
J
= 90 °C - ± 2 -
%
10 A, T
J
= 40 °C to 25 °C - ± 3 -
10 A, T
J
= 20 °C to 125 °C - ± 4 -
10 A, T
J
= 0 °C to 125 °C - ± 5 -
Downslope blanking time -160-ns
HFET over-current trip -90-A
IMON to IREF
IN
at OCP 1.1
c
1.2 1.3
c
V
TEMPERATURE MONITOR
Over-temperature rising threshold -140-
°COver-temperature falling threshold -125-
Over-temperature hysteresis -15-
Temperature coefficient
T
J
= 25 °C to 125 °C - 8 -
mV/K
T
J
= -40 °C to +25 °C - 8 -
TMON voltage at 25 °C temperature V (T
J
) = 0.6 V + (8 mV x T
J
) - 0.80 -
V
TMON high at over-temperature 2.3
c
2.5 2.7
c
FAULT PIN
Output low voltage 5 mA - 0.18 0.26 V
Leakage current -16-nA
BOOTSTRAP DIODE
Forward voltage drop 5 mA - 0.09 - V
On-resistance R
F
-16-
LGCTRL PIN
Rising threshold Logic high, (normal: obeys PWM) - 1.29 1.6
V
Falling threshold Logic low, (forces GL low; left off) 0,70
c
1.01 -
MOSFETs
High-side MOSFET (HFET) R
DS(on)
-3.6-
m
Low-side MOSFET (LFET) R
DS(on)
-0.76-
ELECTRICAL SPECIFICATIONS
(recommended operating conditions, unless otherwise noted. T
J
= -40 °C to +125 °C)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNIT
MIN.
a
TYP. MAX.
a
PWM
GH
GL
t
FL
t
PDHU
t
PDLL
t
RL
t
TSSHDL
t
PDTS
t
PDTSU
t
FU
t
RU
t
PDLU
t
PDHL
t
SSHDU
t
PDLFUR
t
PDUFLR
SiC645
www.vishay.com
Vishay Siliconix
S16-2233-Rev. B, 31-Oct-16
9
Document Number: 65424
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (P
VCC
= 5 V, T
A
= 25 °C, unless otherwise stated)
Fig. 7 - 1.8 V V
OUT
Power Stage Efficiency (V
IN
= 12 V,
f
SW
= 500 kHz; L
OUT
= 0.18 μH/0.17m/FP1008-180-R;
Auto-Phase Enabled in 6-Phase Operation)
Fig. 8 - Power Stage Efficiency (V
IN
= 12 V, f
SW
= 500 kHz;
L
OUT
= 0.18 μH/0.17m/FP1008-180-R
Fig. 9 - Power Dissipation (V
IN
= 12 V, f
SW
= 500 kHz;
L
OUT
= 0.18 μH/0.17m/FP1008-180-R
Fig. 10 - 1.2 V Power Stage Efficiency (V
IN
= 12 V,
f
SW
= 500 kHz; L
OUT
= 0.18 μH/0.17m/FP1008-180-R;
Auto-Phase Enabled in 6-Phase Operation)
Fig. 11 - Power Stage Efficiency (V
IN
= 12 V, f
SW
= 500 kHz;
L
OUT
= 0.18 μH/0.17m/FP1008-180-R
Fig. 12 - Power Dissipation (V
IN
= 12 V, f
SW
= 500 kHz;
L
OUT
= 0.18 μH/0.17m/FP1008-180-R
80
82
84
86
88
90
92
94
96
98
0 30 60 90 120 150 180 210 240
Efciency (%)
Load (A)
Exclude 5 V losses
Include 5 V losses
80
82
84
86
88
90
92
94
96
0 10 20 30 40 50 60
Load (A)
Efciency (%)
2.50 V
1.80 V
1.50 V
1.35 V
1.20 V
1.00 V
0.90 V
0.80 V
0
2
4
6
8
10
12
14
0 10 20 30 40 50 60
Power Losses (W)
Load (A)
2.50 V
1.80 V
1.50 V
1.35 V
1.20 V
1.00 V
0.90 V
0.80 V
80
82
84
86
88
90
92
94
96
98
0 30 60 90 120 150 180 210 240
Efciency (%)
Load (A)
Exclude 5 V losses
Include 5 V losses
80
82
84
86
88
90
92
94
96
0 10 20 30 40 50 60
Load (A)
Efciency (%)
600 kHz
700 kHz
800 kHz
400 kHz
500 kHz
0
2
4
6
8
10
12
14
16
0 10 20 30 40 50 60
Power Losses (W)
Load (A)
700 kHz
800 kHz
400 kHz
500 kHz
600 kHz

SIC645ER-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Gate Drivers Smrt Pwr Stage VRPwr 4.5 to 18V; 5V PWM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet