OM7858/BGA3012,598

1. Product profile
1.1 General description
The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity CATV line extenders and drop amplifiers over a frequency
range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.
1.2 Features and benefits
1.3 Applications
General wideband amplifiers.
CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.
CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,
trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.
The product is ideally suited for applications as drop amplifiers in CATV distribution
systems such as FTTH
1.4 Quick reference data
[1] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f
2
f
1
, where
f
2
=f
1
6 MHz. Input power P
i
= 20 dBm.
[2] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f
2
f
1
, with
40 MHz < f
1
-f
2
< 1006 MHz. Input power P
i
= 20 dBm.
BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
Rev. 3 — 26 September 2013 Product data sheet
SOT89
Internally biased Noise figure of 3.1 dB
Flat gain 75 input and output impedance
High linearity with an IP3
O
of 40 dBm and
an IP2
O
of 60 dBm
Operating from 5 V to 8 V supply
Table 1. Quick reference data
Bandwidth 40 MHz to 1006 MHz; T
amb
=25
C; typical values at V
CC
= 8 V; Z
S
=Z
L
=75
; R1 = 100
; R2 = 300
.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 7.6 8 8.4 V
I
CC(tot)
total supply current - 110 125 mA
T
amb
ambient temperature 40 - +85 C
NF noise figure f = 500 MHz - 3.1 3.6 dB
P
L(1dB)
output power at 1 dB gain compression 21.5 23 - dBm
IP3
O
output third-order intercept point
[1]
36 40 - dBm
IP2
O
output second-order intercept point
[2]
-60- dBm
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 2 of 15
NXP Semiconductors
BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
2. Pinning information
[1] This pin is DC-coupled and requires an external DC-blocking capacitor.
[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 RF_OUT and biasing
[1]
2GND
[2]
3RF_IN
[1]
321
sym130
2
13
Table 3. Ordering information
Type number Package
Name Description Version
BGA3012 - plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads
SOT89
OM7858 EVB 1 GHz 12 dB gain wideband amplifier application -
OM7862 EVB 5 MHz to 300 MHz 12 dB reverse amplifier application -
OM7866 EVB 40 MHz to 1006 MHz push-pull amplifier application -
Table 4. Marking codes
Type number Marking code Description
BGA3012 *6W * = W : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.6 +15 V
P
i
input power single tone - 20 dBm
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
T
amb
ambient temperature 40 +85 C
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
2- kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B
2- kV
BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 3 — 26 September 2013 3 of 15
NXP Semiconductors
BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
6. Thermal characteristics
7. Characteristics
7.1 Forward application
[1] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2 f
2
f
1
, where f
2
=f
1
6 MHz. Input power P
i
= 20 dBm.
[2] The fundamental frequencies (f
1
) and (f
2
) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f
2
f
1
, with 40 MHz < f
1
-f
2
< 1006 MHz. Input power P
i
= 20 dBm.
[3] Measured with 132 NTSC channels V
O
= 30 dBmV.
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 40 K/W
Table 7. Characteristics at V
CC
= 8 V
Bandwidth 40 MHz to 1006 MHz; T
amb
= 25
C; typical values at V
CC
= 8 V; Z
S
=Z
L
=75
;
R1 = 100
; R2 = 300
.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage RF input AC coupled 7.6 8 8.4 V
I
CC(tot)
total supply current - 110 125 mA
s
21
2
insertion power gain 11 12 13 dB
SL
sl
slope straight line - 0.5 - dB
FL flatness of frequency response - 0.5 - dB
NF noise figure f = 50 MHz - 3.0 3.5 dB
f = 500 MHz - 3.1 3.6 dB
f = 1000 MHz - 3.4 3.9 dB
RL
in
input return loss f = 50 MHz - 22 - dB
f = 500 MHz - 27 - dB
f = 1000 MHz - 29 - dB
RL
out
output return loss f = 50 MHz - 21 - dB
f = 500 MHz - 22 - dB
f = 1000 MHz - 15 - dB
P
L(1dB)
output power at 1 dB
gain compression
21.5 23 - dBm
IP3
O
output third-order intercept point
[1]
36 40 - dBm
IP2
O
output second-order intercept point
[2]
-60-dBm
CTB composite triple beat
[3]
- 75 - dBc
CSO composite second-order distortion
[3]
- 60 - dBc

OM7858/BGA3012,598

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
BOARD OM7858 BGA3012
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet