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IXTP1N100P

P1-P3P4-P5
© 2017 IXYS CORPORATION, All Rights Reserved
DS99234H(8/17)
IXTY1N100P
IXTA1N100P
IXTP1N100P
V
DSS
= 1000V
I
D25
= 1A
R
DS(on)
15
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 50μA 2.5 4.5 V
I
GSS
V
GS
= 20V, V
DS
= 0V 50 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 A
T
J
= 125C 100 A
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 12.2 15.0
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 1000 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 1000 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C 1.0 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
1.8 A
I
A
T
C
= 25C 1.0 A
E
AS
T
C
= 25C 100 mJ
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 10 V/ns
P
D
T
C
= 25C50W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
F
C
Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
M
d
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
Features
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Lasers Drivers

Robotics and Servo Controls
Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
G = Gate D = Drain
S = Source Tab = Drain
G
D
S
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
TO-263 (IXTA)
G
D (Tab)
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1N100P IXTA1N100P
IXTP1N100P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 30V, I
D
= 0.5 • I
D25
, Note 1 0.45 0.78 S
C
iss
331 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 24 pF
C
rss
5.5 pF
Q
g(on)
15.5 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
4.1 nC
Q
gd
8.0 nC
t
d(on)
20 ns
t
r
26 ns
t
d(off)
55 ns
t
f
24 ns
R
thJC
2.5 C/W
R
thCS
TO-220 0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 50 (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 1.0 A
I
SM
Repetitive, Pulse Width Limited by T
JM
3.0 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
750 ns
I
F
= 1A, -di/dt = 100A/μs, V
R
= 100V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY1N100P IXTA1N100P
IXTP1N100P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 0.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 1.0A
I
D
= 0.5A
Fig. 5. R
DS(on)
Normalized to I
D
= 0.5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTP1N100P

Mfr. #:
Buy IXTP1N100P
Manufacturer:
Littelfuse
Description:
MOSFET 1 Amps 1000V 14 Rds
Lifecycle:
New from this manufacturer.
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