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IXTP1N100P

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1N100P IXTA1N100P
IXTP1N100P
Fig. 7. Input Admittance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0246810121416
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 0.5A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal Impedance
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1N100P(1C) 4-03-08
IXTY1N100P IXTA1N100P
IXTP1N100P
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E
A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e
c
e1
e1
3X b2
e
3X b
EJECTOR
PIN
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E
A
c2
H
A1
A2
L2
L
A
e
c
0
e1 e1 e1 e1 e1
OPTIONAL
5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
2
3
4
L3
A2
A1
e
c
e
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
P1-P3P4-P5

IXTP1N100P

Mfr. #:
Buy IXTP1N100P
Manufacturer:
Littelfuse
Description:
MOSFET 1 Amps 1000V 14 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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