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IXGT60N60C3D1

P1-P3P4-P6P7-P7
© 2010 IXYS CORPORATION, All Rights Reserved
GenX3
TM
600V IGBTs
with Diode
IXGH60N60C3D1
IXGT60N60C3D1
High Speed PT IGBTs for
40-100kHz switching
V
CES
= 600V
I
C110
= 60A
V
CE(sat)
≤ ≤
≤ ≤
≤
2.5V
t
fi (typ)
= 50ns
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C, (Limited by Leads) 75 A
I
C110
T
C
= 110°C 60 A
I
F110
T
C
= 110°C 26 A
I
CM
T
C
= 25°C, 1ms 300 A
I
A
T
C
= 25°C 40 A
E
AS
T
C
= 25°C 400 mJ
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 3Ω I
CM
= 125 A
(RBSOA) Clamped Inductive Load V
CE
≤ V
CES
P
C
T
C
= 25°C 380 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS100009B(01/10)
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
High Avalanche Capability
z
Anti-Parallel Ultra Fast Diode
z
International Standard Packages
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 (IXGH)
TO-268 (IXGT)
G
C
E
C (Tab)
E
G
C (Tab)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250µA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES,
V
GE
= 0V 50 µA
T
J
= 125°C 1 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 40A, V
GE
= 15V 2.2 2.5 V
T
J
= 125°C 1.7 V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH60N60C3D1
IXGT60N60C3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
F
2.7 V
T
J
=150°C 1.6 V
I
RM
T
J
= 100°C 4 A
t
rr
T
J
=100°C 100 ns
25 ns
R
thJC
0.9 °C/W
I
F
= 30A, V
GE
= 0V, Note 1
I
F
= 30A, V
GE
= 0V, di
F
/dt =100 A/µs,
V
R
= 100V
I
F
= 1A; -di/dt = 100 A/µs, V
R
= 30V
Notes:
1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
e
∅ P
TO-247 (IXGH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter Tab - Collector
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXGT) Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter Tab - Collector
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 40A, V
CE
= 10V, Note 1 23 38 S
C
ies
2810 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 210 pF
C
res
80 pF
Q
g
115 nC
Q
ge
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
22 nC
Q
gc
43 nC
t
d(on)
21 ns
t
ri
33 ns
E
on
0.80 mJ
t
d(off)
70 110 ns
t
fi
50 ns
E
off
0.45 0.80 mJ
t
d(on)
21 ns
t
ri
33 ns
E
on
1.25 mJ
t
d(off)
112 ns
t
fi
86 ns
E
off
0.80 mJ
R
thJC
0.33 °C/W
R
thCK
0.21 °C/W
Inductive Load, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
Inductive Load, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH60N60C3D1
IXGT60N60C3D1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0246810121416
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
7V
9V
11V
5V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 80A
I
C
= 40A
I
C
= 20A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 80A
40A
20A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P6P7-P7

IXGT60N60C3D1

Mfr. #:
Buy IXGT60N60C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 60 Amps 600V
Lifecycle:
New from this manufacturer.
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