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IXGT60N60C3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH60N60C3D1
IXGT60N60C3D1
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
100 150 200 250 300 350 400 450 500 550 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 3
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10 20 30 40 50 60 70 80 90 100 110 120
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 40A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH60N60C3D1
IXGT60N60C3D1
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
E
off
- MilliJoules
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 80A
I
C
= 40A
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
-
Nanoseconds
60
70
80
90
100
110
120
130
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 80A
I
C
= 40A
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
60
70
80
90
100
110
120
130
140
150
160
170
3456789101112131415
R
G
- Ohms
t
f
- Nanoseconds
60
80
100
120
140
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 480V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20 25 30 35 40 45 50 55 60 65 70 75 80
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
I
C
= 80A
I
C
= 40A
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
20
40
60
80
100
120
140
160
180
20 25 30 35 40 45 50 55 60 65 70 75 80
I
C
- Amperes
t
f
- Nanoseconds
60
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH60N60C3D1
IXGT60N60C3D1
IXYS REF: G_60N60C3(6D)01-15-10-E
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
10
20
30
40
50
60
70
80
90
100
110
20 25 30 35 40 45 50 55 60 65 70 75 80
I
C
- Amperes
t
r
- Nanoseconds
18
19
20
21
22
23
24
25
26
27
28
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 25ºC, 125ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
20
30
40
50
60
70
80
90
100
110
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
20
21
22
23
24
25
26
27
28
29
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 80A
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
140
3 4 5 6 7 8 9 101112131415
R
G
- Ohms
t
r
- Nanoseconds
15
20
25
30
35
40
45
50
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6P7-P7

IXGT60N60C3D1

Mfr. #:
Buy IXGT60N60C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 60 Amps 600V
Lifecycle:
New from this manufacturer.
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