BAT30AFILM

P1-P3 P4-P6 P7-P9 P10-P12 P13-P14

October 2009 Doc ID 12564 Rev 3 1/14

14

BAT30

Small signal Schottky diodes

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ Extremely fast switching

■ Surface mount device

■ Low capacitance diode

Description

The BAT30 series uses 30 V Schottky barrier

diodes encapsulated in a wide range of packages

such as SOD-323, SOD-523, SOD-923, SOT-23,

SOT-323, or SOT-666. This device is specially

suited for switching mode applications needing

low forward voltage drop diodes.

Table 1. Device summary

Symbol Value

I

F

300 mA

V

RRM

30 V

C(typ) 14 pF

T

j

(max) 150 °C

SOD-323

SOD-923

SOD-523

SOT-23

SOT-666

BAT30JFILM

(Single)

BAT30LFILM

(Single)

BAT30KFILM

(Single)

BAT30FILM

(Single)

BAT30SFILM

(Series)

BAT30CFILM

(Common cathode)

BAT30WFILM

(Single)

BAT30CWFILM

(Common cathode)

BAT30AWFILM

(Common anode)

BAT30SWFILM

(Series)

BAT30-07P6FILM

(2 parallel diodes)

BAT30-09P6FILM

(2 opposite diodes)

BAT30AFILM

(Common anode)

SOT-323

Configurations in top view

www.st.com

Characteristics BAT30

2/14 Doc ID 12564 Rev 3

1 Characteristics

Table 2. Absolute ratings (limiting values at T

j

= 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage 30 V

I

F

Continuous forward current 300 mA

I

FSM

Surge non repetitive forward current t

p

= 10 ms Sinusoidal 1 A

T

stg

Storage temperature range -65 to +150 °C

T

j

Maximum operating junction temperature

(1)

1. Pulse test: t

p

= 5 ms, δ < 2 %

150 °C

T

L

Maximum soldering temperature 260 °C

Table 3. Thermal parameters

Symbol Parameter Value Unit

R

th(j-a)

Junction to ambient

(1)

1. On epoxy printed circuit board with recommended pad layout

SOT-23 500

°C/W

SOT-323, SOD-323, 550

SOD-523, SOT-666 600

SOD-923 900

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

R

(1)

1. Pulse test: t

p

= 5 ms, δ < 2 %

Reverse leakage current

T

j

= 25 °C

V

R

= 5 V - - 0.5

µA

V

R

= 10 V - - 1

V

R

= 25 V - 0.65 3

V

R

= 30 V - - 5

T

j

= 70 °C

V

R

= 10 V

-720

T

j

= 85 °C - 18 50

V

F

(2)

2. Pulse test: t

p

= 380 µs, δ < 2 %

Forward voltage drop T

j

= 25° C

I

F

= 0.1 mA - - 240

mV

I

F

= 1 mA - - 300

I

F

= 10 mA - - 375

I

F

= 30 mA - - 430

I

F

= 100 mA - - 500

I

F

= 200 mA - - 580

I

F

= 300 mA - 530 -

BAT30 Characteristics

Doc ID 12564 Rev 3 3/14

Table 5. Dynamic characteristics

Symbol Parameter

Test conditions

Min. Typ Max. Unit

C Diode capacitance

V

R

= 0 V, F = 1 MHz - 22 -

pFV

R

= 1 V, F = 1 MHz - 14 -

V

R

= 10 V, F = 1 MHz - 6 -

Figure 1. Power dissipation versus average

forward current

Figure 2. Average forward current versus

ambient temperature (δ = 1)

P (W)

0.000

0.025

0.050

0.075

0.100

0.125

0.150

0.175

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35

T

δ

=tp/T

tp

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

I (A)

F(AV)

I (A)

F(AV)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0 25 50 75 100 125 150

T

δ

=tp/T

tp

T (° C)

amb

Figure 3. Relative variation of thermal

impedance junction to ambient

versus pulse duration

Figure 4. Relative variation of thermal

impedance junction to ambient

versus pulse duration

1.E-02

1.E-01

1.E+00

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

Alumine substrate

10 x 8 x 0.5 mm

Single pulse

SOT-23

Z

th(j-a)

/R

th(j-a)

t

P

(s)

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Single pulse

SOT-323/SOD-323

Epoxy printed board FR4

Copper surface = 2.25 mm

2

(s)t

P

Z

th(j-a)

/R

th(j-a)

Coppr thickness = 35 µm

P1-P3 P4-P6 P7-P9 P10-P12 P13-P14

BAT30AFILM

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

DIODE ARRAY SCHOTTKY 30V SOT23-3

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet