BFU690F All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 14 March 2014 4 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
7. Characteristics
[1] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
=MSG.
Table 7. Characteristics
T
j
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown voltage I
C
=2.5A; I
E
=0mA 16 - - V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=1mA; I
B
=0mA 5.5 - - V
I
C
collector current - 70 100 mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
= 8 V - - 100 nA
h
FE
DC current gain I
C
=20mA; V
CE
= 2 V 90 135 180
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 527 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 1699 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 404 - fF
f
T
transition frequency I
C
=60mA; V
CE
=1V; f=2GHz;
T
amb
=25C
-18- GHz
G
p(max)
maximum power gain I
C
=60mA; V
CE
=1V; T
amb
=25C
[1]
f = 1.5 GHz - 22 - dB
f = 1.8 GHz - 20.5 - dB
f = 2.4 GHz - 17 - dB
s
21
2
insertion power gain I
C
=60mA; V
CE
=1V; T
amb
=25C
f = 1.5 GHz - 15 - dB
f = 1.8 GHz - 13.5 - dB
f = 2.4 GHz - 11 - dB
NF noise figure I
C
=15mA; V
CE
=2V;
S
=
opt
;
T
amb
=25C
f = 1.5 GHz - 0.60 - dB
f = 1.8 GHz - 0.65 - dB
f = 2.4 GHz - 0.70 - dB
G
ass
associated gain I
C
=15mA; V
CE
=2V;
S
=
opt
;
T
amb
=25C
f = 1.5 GHz - 18.5 - dB
f = 1.8 GHz - 17.5 - dB
f = 2.4 GHz - 15.5 - dB
P
L(1dB)
output power at 1 dB gain compression I
C
=70mA; V
CE
=4V; Z
S
=Z
L
=50;
T
amb
=25C
f = 1.5 GHz - 22 - dBm
f = 1.8 GHz - 22 - dBm
f = 2.4 GHz - 20 - dBm
IP3 third-order intercept point I
C
=70mA; V
CE
=4V; Z
S
=Z
L
=50;
T
amb
=25C
f = 1.5 GHz - 34 - dBm
f = 1.8 GHz - 34 - dBm
f = 2.4 GHz - 33 - dBm
