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BFU690F,115

P1-P3P4-P6P7-P9P10-P12
BFU690F All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 14 March 2014 7 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
V
CE
=1V; I
C
=10mA; T
amb
=25C. V
CE
=1V; I
C
=60mA; T
amb
=25C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25C.
(1) f = 2.4 GHz
(2) f = 1.8 GHz
(3) f = 1.5 GHz
V
CE
=2V; I
C
= 15 mA; T
amb
=25C.
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0108462
001aam838
20
30
10
40
G
(dB)
0
MSG
|S21|
2
G
p(max)
f (GHz)
0108462
001aam839
20
30
10
40
G
(dB)
0
MSG
|S21|
2
G
p(max)
I
C
(mA)
10 454030 3520 2515
001aam840
0.4
0.8
0.2
0.6
1.0
NF
min
(dB)
0
(1)
(2)
(3)
001aam841
f (GHz)
0321
0.4
0.2
0.8
0.6
1.0
NF
min
(dB)
0
BFU690F All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 14 March 2014 8 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
8. Package outline
Fig 11. Package outline SOT343F
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BFU690F All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 2 — 14 March 2014 9 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 8. Abbreviations
Acronym Description
DRO Dielectric Resonator Oscillator
Ka Kurtz above
LTE Long Term Evolution
NPN Negative-Positive-Negative
UMTS Universal Mobile Telecommunications System
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU690F v.2 20140314 Product data sheet - BFU690F v.1
Modifications:
• Table 1 on page 1: The value and conditions for P
tot
have been updated.
• Table 5 on page 2: The value and conditions for P
tot
have been updated.
• Table 6 on page 3: The value and conditions for R
th(j-sp)
have been updated.
• Figure 1 on page 3: The graph has been updated.
• Section 9 on page 9: The ESD caution has been moved here from Section 1.1 on page 1.
BFU690F v.1 20101216 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12

BFU690F,115

Mfr. #:
Buy BFU690F,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 18GHz
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