Vishay Siliconix
Si5903DC
Document Number: 71054
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
1
Dual P-Channel 2.5 V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.155 at V
GS
= - 4.5 V
± 2.9
0.180 at V
GS
= - 3.6 V
± 2.7
0.260 at V
GS
= - 2.5 V
± 2.2
Bottom View
1206-8 ChipFET
®
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
1
Marking Code
DA XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free)
Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
± 2.9 ± 2.1
A
T
A
= 85 °C
± 2.1 ± 1.5
Pulsed Drain Current
I
DM
± 10
Continuous Source Current (Diode Conduction)
a
I
S
- 1.8 - 0.9
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.1 1.1
W
T
A
= 85 °C
1.1 0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
50 60
°C/W
Steady State 90 110
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
30 40