SI5903DC-T1-E3

www.vishay.com
4
Document Number: 71054
S10-0547-Rev. C, 08-Mar-10
Vishay Siliconix
Si5903DC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71054
.
Threshold Voltage
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0
30
50
10
20
Power (W)
Time (s)
40
11006001010
-1
10
-2
10
-4
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=90°C/W
3. T
JM
-- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Package Information
Vishay Siliconix
Document Number: 71151
15-Jan-04
www.vishay.com
1
1206-8 ChipFETR
c
EE
1
e
D
A
6578
3421
4
L
5678
4321
4
S b
2X 0.10/0.13 R
Backside View
x
NOTES:
1. All dimensions are in millimeaters.
2. Mold gate burrs shall not exceed 0.13 mm per side.
3. Leadframe to molded body offset is horizontal and vertical shall not exceed
0.08 mm.
4. Dimensions exclusive of mold gate burrs.
5. No mold flash allowed on the top and bottom lead surface.
DETAIL X
C1
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A
1.00 1.10 0.039 0.043
b
0.25 0.30 0.35 0.010 0.012 0.014
c
0.1 0.15 0.20 0.004 0.006 0.008
c1
0 0.038 0 0.0015
D
2.95 3.05 3.10 0.116 0.120 0.122
E
1.825 1.90 1.975 0.072 0.075 0.078
E
1
1.55 1.65 1.70 0.061 0.065 0.067
e
0.65 BSC 0.0256 BSC
L
0.28 0.42 0.011 0.017
S
0.55 BSC 0.022 BSC
5_Nom 5_Nom
ECN: C-03528—Rev. F, 19-Jan-04
DWG: 5547
AN812
Vishay Siliconix
Document Number: 71127
12-Dec-03
www.vishay.com
1
Dual-Channel 1206-8 ChipFETr Power MOSFET Recommended
Pad Pattern and Thermal Performance
INTRODUCTION
New Vishay Siliconix ChipFETs in the leadless 1206-8
package feature the same outline as popular 1206-8 resistors
and capacitors but provide all the performance of true power
semiconductor devices. The 1206-8 ChipFET has the same
footprint as the body of the LITTLE FOOTR TSOP-6, and can
be thought of as a leadless TSOP-6 for purposes of visualizing
board area, but its thermal performance bears comparison
with the much larger SO-8.
This technical note discusses the dual ChipFET 1206-8
pin-out, package outline, pad patterns, evaluation board
layout, and thermal performance.
PIN-OUT
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel 1206-8 ChipFET device. The pin-out is
similar to the TSOP-6 configuration, with two additional drain
pins to enhance power dissipation and thus thermal
performance. The legs of the device are very short, again
helping to reduce the thermal path to the external heatsink/pcb
and allowing a larger die to be fitted in the device if necessary.
FIGURE 1.
Dual 1206-8 ChipFET
S
1
G
1
S
2
D
1
D
1
D
2
G
2
D
2
For package dimensions see the 1206-8 ChipFET package
outline drawing (http://www.vishay.com/doc?71151).
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in Application
Note 826, Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs,
(http://www.vishay.com/doc?72286). This is sufficient for low
power dissipation MOSFET applications, but power
semiconductor performance requires a greater copper pad
area, particularly for the drain leads.
FIGURE 2. Footprint With Copper Spreading
80 mil
43 mil
10 mil
26 mil
18 mil
25 mil
The pad pattern with copper spreading shown in Figure 2
improves the thermal area of the drain connections (pins 5 and
6, pins 7 and 8) while remaining within the confines of the basic
footprint. The drain copper area is 0.0019 sq. in. or
1.22 sq. mm. This will assist the power dissipation path away
from the device (through the copper leadframe) and into the
board and exterior chassis (if applicable) for the dual device.
The addition of a further copper area and/or the addition of vias
to other board layers will enhance the performance still further.
An example of this method is implemented on the Vishay
Siliconix Evaluation Board described in the next section
(Figure 3).
THE VISHAY SILICONIX EVALUATION
BOARD FOR THE DUAL 1206-8
The dual ChipFET 1206-08 evaluation board measures 0.6 in
by 0.5 in. Its copper pad pattern consists of an increased pad
area around each of the two drain leads on the top-side—
approximately 0.0246 sq. in. or 15.87 sq. mm—and vias
added through to the underside of the board, again with a
maximized copper pad area of approximately the board-size
dimensions, split into two for each of the drains. The outer
package outline is for the 8-pin DIP, which will allow test
sockets to be used to assist in testing.
The thermal performance of the 1206-8 on this board has been
measured with the results following on the next page. The
testing included comparison with the minimum recommended
footprint on the evaluation board-size pcb and the industry
standard one-inch square FR4 pcb with copper on both sides
of the board.

SI5903DC-T1-E3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET 2P-CH 20V 2.1A 1206-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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