NXP Semiconductors
PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
PBHV8560Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 March 2015 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 600 V
V
CEO
collector-emitter voltage open base - 600 V
V
CESM
collector-emitter peak voltage V
BE
= 0 V - 600 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 0.5 A
[1] - 0.65 WP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 1.4 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
aaa-013425
T
amb
(°C)
-60 18010020
0.8
0.4
1.2
1.6
P
tot
(W)
0
(1)
(2)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves