BFR505 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 September 2011 3 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
5. Limiting values
[1] T
s
is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
[1] T
s
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 20 V
V
CES
collector-emitter voltage R
BE
= 0 -15V
V
EBO
emitter-base voltage - 2.5 V
I
C
DC collector current continuous - 18 mA
P
tot
total power dissipation up to T
s
= 135 C
[1]
-150mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 175 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-s)
from junction to soldering point
[1]
260 K/W
Table 7. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector cut-off current I
E
= 0 A; V
CB
= 6 V --50nA
h
FE
DC current gain I
C
= 5 mA; V
CE
= 6 V 60 120 250
C
e
emitter capacitance I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
-0.4-pF
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 6 V;
f = 1 MHz
-0.4-pF
C
re
feedback capacitance I
C
= i
c
= 0 A; V
CB
= 6 V;
f = 1 MHz
-0.3-pF
f
T
transition frequency I
C
= 5 mA; V
CE
= 6 V;
f=1GHz
-9-GHz
G
UM
maximum unilateral
power gain
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25 C; f = 900 MHz
[1]
-17-dB
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25 C; f = 2 GHz
-10-dB
S
21
2
insertion power gain I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25 C; f = 900 MHz
13 14 - dB
