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BFR505,215

P1-P3P4-P6P7-P9P10-P12P13-P14
BFR505 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 September 2011 4 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
[1] G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
[2] I
C
= 5 mA; V
CE
= 6 V; R
L
= 50 ; T
amb
= 25 C; f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2pq)
= 898 MHz
and f
(2qp)
= 904 MHz.
F noise figure
s
=
opt
; I
C
= 5 mA;
V
CE
= 6 V;T
amb
= 25 C;
f = 900 MHz
-1.21.7dB
s
=
opt
; I
C
= 5 mA;
V
CE
= 6 V;
T
amb
= 25 C; f = 900 MHz
-1.62.1dB
s
=
opt
; I
C
= 5 mA;
V
CE
= 6 V;
T
amb
= 25 C; f = 2 GHz
-1.9-dB
P
L1
output power at 1 dB
gain compression
I
C
= 5 mA; V
CE
= 6 V;
R
L
= 50 ;
T
amb
= 25 C; f = 900 MHz
-4-dBm
ITO third order intercept
point
[2]
-10-dBm
Table 7. Characteristics …continued
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
G
UM
10 log
S
21
2
1S
11
2
–1S
22
2
–
------------------------------------------------------
dB=
V
CE
= 6 V.
Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector
current.
T
s
(°C)
0 20015050 100
mra718
100
50
150
200
P
tot
(mW)
0
mra719
100
150
50
200
250
h
FE
0
I
C
(mA)
10
−3
10
2
1010
−2
110
−1
BFR505 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 September 2011 5 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
I
C
= 0 A; f = 1 MHz. T
amb
= 25 C; f = 1 GHz.
(1) V
CE
= 6 V.
(2) V
CE
=3V.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
Fig 4. Transition frequency as a function of collector
current.
V
CE
= 6 V; f = 900 MHz.
(1) MSG.
(2) G
UM
.
V
CE
= 6 V; f = 2 GHz.
(1) MSG.
(2) G
max
.
(3) G
UM
.
Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current.
V
CB
(V)
0108462
mra720
0.2
0.1
0.3
0.4
C
re
(pF)
0
mra721
4
8
12
f
T
(GHz)
0
I
C
(mA)
10
−1
10
2
101
(1)
(2)
mra764
I
C
(mA)
01284
10
15
5
20
25
gain
(dB)
0
(1)
(2)
mra765
I
C
(mA)
01284
10
15
5
20
25
gain
(dB)
0
(1) (2)
(3)
BFR505 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 September 2011 6 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
V
CE
= 6 V; I
C
= 1.25 mA.
(1) G
UM
.
(2) MSG.
(3) G
max
.
V
CE
= 6 V; I
C
= 5 mA.
(1) G
UM
.
(2) MSG.
(3) G
max
.
Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency.
V
CE
= 6 V.
(1) f = 900 MHz.
(2) f = 1000 MHz.
(3) f = 2000 MHz.
(4) f = 2000 MHz.
(5) f = 1000 MHz.
(6) f = 900 MHz.
(7) f = 500 MHz.
V
CE
= 6 V.
(1) I
C
= 5 mA.
(2) I
C
= 1.25 mA.
(3) I
C
= 5 mA.
(4) I
C
= 1.25 mA.
Fig 9. Minimum noise figure and associated
available gain as functions of collector
current.
Fig 10. Minimum noise figure and associated
available gain as functions of frequency.
f (MHz)
10 10
4
10
3
10
2
mra766
20
30
10
40
50
gain
(dB)
0
(2)
(1)
(3)
f (MHz)
10 10
4
10
3
10
2
mra767
20
30
10
40
50
gain
(dB)
0
(1)
(3)
(2)
mra726
2
3
1
4
5
F
min
(dB)
0
5
10
0
15
20
G
ass
(dB)
−5
I
C
(mA)
1010
−1
1
(4)
(3)
(5)
(2)
(1)
(6)
(7)
F
min
G
ass
mra727
2
3
1
4
5
F
min
(dB)
0
5
10
0
15
20
G
ass
(dB)
−5
f (MHz)
10
4
10
3
10
2
(1)
(3)
(4)
(2)
F
min
G
ass
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BFR505,215

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NXP Semiconductors
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RF Bipolar Transistors NPN 15V 9GHZ
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