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NTR3162PT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 2
1 Publication Order Number:
NTR3162P/D
NTR3162P
Power MOSFET
-- 2 0 V , -- 3 . 6 A , S i n g l e P -- C h a n n e l , S O T -- 2 3
Features
• Low R
DS(on)
at Low Gate Voltage
• --0.3 V Low Threshold Voltage
• Fast Switching Speed
• This is a Pb--Free Device
Applications
• Battery Management
• LoadSwitchinPWM
• Battery Protection
MAXIMUM RATINGS (T
J
=25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain--to--Source Voltage V
DSS
-- 2 0 V
Gate--to--Source Voltage V
GS
±8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
=25°C
I
D
-- 2 . 2
A
T
A
=85°C -- 1 . 6
t ≤ 5s
T
A
=25°C -- 3 . 6
Power Dissipation
(Note 1)
Steady
State
T
A
=25°C P
D
0.48
W
t ≤ 5s
1.25
Pulsed Drain Current
t
p
=10ms
I
DM
--10.7 A
Operating Junction and Storage Temperature T
J
,
T
stg
-- 5 5 t o
150
°C
Source Current (Body Diode) I
S
-- 0 . 6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction--to--Ambient -- Steady State (Note 1)
R
θ
JA
260
°C/W
Junction--to--Ambient -- t < 10 s (Note 1)
R
θ
JA
100
1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
Device Package Shipping
†
ORDERING INFORMATION
http://onsemi.com
-- 2 0 V
95 mΩ @--2.5V
70 mΩ @--4.5V
R
DS(on)
MAX
-- 2 . 2 A
I
D
MAXV
(BR)DSS
SOT--23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
3
1
3
Drain
1
Gate
2
Source
NTR3162PT1G SOT--23
(Pb--Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
120 mΩ @--1.8V
1
TRDMG
G
TRD = Specific Device Code
M = Date Code
G = Pb --Free Package
(Note: Microdot may be in either location)
-- 1 . 9 A
-- 1 . 7 A
NTR3162PT3G SOT--23
(Pb--Free)
10000 /
Tape & Reel
G
S
D
P--CHANNEL MOSFET
NTR3162P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V,I
D
= --250 mA
-- 2 0 V
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= --250 mA,Referenceto25°C
14.5 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
=0V,V
DS
=--16V,T
J
=25°C
V
GS
=0V,V
DS
=--16V,T
J
=85°C
-- 1 . 0
-- 5 . 0
mA
Gate--to--Source Leakage Current I
GSS
V
DS
=0V,V
GS
= 8V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
,I
D
= --250 mA
-- 0 . 3 -- 0 . 6 -- 1 . 0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.5 mV/°C
Drain--to--Source On--Resistance R
DS(on)
V
GS
=--4.5V,I
D
=--2.2A 48 70 mΩ
V
GS
=--2.5V,I
D
=--1.9A 57 95
V
GS
=--1.8V,I
D
=--1.7A 72 120
V
GS
=--1.5V,I
D
=--1.0A 88
Forward Transconductance g
FS
V
DS
=--5.0V,I
D
=--2.2A 9.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
=0V,f=1.0MHz,
V
DS
=--10V
940
pF
Output Capacitance C
oss
140
Reverse Transfer Capacitance C
rss
100
Total Gate Charge Q
G(TOT)
V
GS
=--4.5V,V
DS
=--10V,
I
D
=--3.6A
10.3
nC
Threshold Gate Charge Q
G(TH)
0.5
Gate--to--Source Charge Q
GS
1.4
Gate--to--Drain Charge Q
GD
2.7
Gate Resistance R
G
6.0
Ω
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
t
d(on)
V
GS
=--4.5V,V
DD
=--10V,
I
D
=--3.6A,R
G
=6Ω
8.0
ns
Rise Time t
r
15
Turn--Off Delay Time t
d(off)
31
Fall Time t
f
50
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
=0V,I
S
=--1.0A,T
J
=25°C 0.7 1.2 V
Reverse Recovery Time t
RR
V
GS
=0V,I
D
=--1.0A,
dI
SD
/d
t
= 100 A/ms
25
ns
Charge Time t
a
8.0
Discharge Time t
b
17
Reverse Recovery Charge Q
RR
11 nC
2. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics a re independent of operating junction temperatures.
NTR3162P
http://onsemi.com
3
P--CHANNEL TYPICAL CHARACTERISTICS
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-- V
DS
, DRAIN--TO--SOURCE VOLTAGE (V)
-- I
D,
DRAIN CURRENT (A)
Figure 1. On--Region Characteristics
T
J
=25°C
-- 1 . 5 V
-- 2 . 0 V
-- 1 . 2 V
V
GS
= --5 V -- --2.5 V
-- 1 . 8 V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.5 0.75 1 1.25 1.5 1.75 2
Figure 2. Transfer Characteristics
-- V
GS
, GATE--TO--SOURCE VOLTAGE (V)
-- I
D,
DRAIN CURRENT (A)
125°C
T
J
=--55°C
25°C
V
DS
=--5V
0
0.05
0.10
0.15
0.20
0.25
0.30
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
-- V
GS
, GATE VOLTAGE (V)
R
DS(on),
DRAIN--TO--SOURCE RESISTANCE (Ω)
I
D
=--2.2A
T
J
=25°C
0
0.05
0.10
0.15
0.20
0.25
0.30
0 12345678910
-- I
D,
DRAIN CURRENT (A)
R
DS(on),
DRAIN--TO--SOURCE RESISTANCE (Ω)
T
J
=25°C
V
GS
=--2.5V
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
V
GS
=--4.5V
V
GS
=--1.8V
V
GS
=--1.5V
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
--50 --25 0 25 50 75 100 125 150
Figure 5. On--Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
I
D
=--2.2A
R
DS(on),
DRAIN--TO--SOURCE RESISTANCE
(NORMALIZED)
V
GS
=--4.5V
1000
10000
100000
0 2 4 6 8 10121416182
0
-- V
DS,
DRAIN--TO--SOURCE VOLTAGE (V)
-- I
DSS
, LEAKAGE (nA)
T
J
= 125°C
V
GS
=0V
T
J
= 150°C
Figure 6. Drain--to--Source Leakage Current
vs. Voltage
P1-P3P4-P6

NTR3162PT1G

Mfr. #:
Buy NTR3162PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET SOT23 20V TR
Lifecycle:
New from this manufacturer.
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