VS-ST330SPbF Series
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Vishay Semiconductors
Revision: 01-Mar-17
3
Document Number: 94409
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
5 ms 10.0
W
Maximum average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms 3.0 A
Maximum peak positive gate voltage +V
GM
T
J
= T
J
maximum, t
p
5 ms
20
V
Maximum peak negative gate voltage -V
GM
5.0
DC gate current required to trigger I
GT
T
J
= -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mAT
J
= 25 °C 100 200
T
J
= 125 °C 50 -
DC gate voltage required to trigger V
GT
T
J
= -40 °C 2.5 -
V
T
J
= 25 °C 1.8 3
T
J
= 125 °C 1.1 -
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
10 mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
J
-40 to +125
°C
Maximum storage temperature range T
Stg
-40 to +150
Maximum thermal resistance, junction to case R
thJC
DC operation 0.10
K/W
Maximum thermal resistance, case to heatsink R
thC-hs
Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads
48.5
(425)
N · m
(lbf · in)
Approximate weight 535 g
Case style See dimension - link at the end of datasheet TO-209AE (TO-118)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
T
J
= T
J
maximum K/W
120° 0.013 0.014
90° 0.017 0.018
60° 0.025 0.026
30° 0.041 0.042
