Nexperia
PMPB48EPA
30 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 235 270 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - 67 74 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
017aaa542
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB48EPA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 27 March 2018 5 / 14
