Nexperia
PMPB48EPA
30 V, P-channel Trench MOSFET
V
GS
(V)
0 -5-4-2 -3-1
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-8
-16
-24
I
D
(A)
0
T
j
= 25 °CT
j
= 150 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
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1.0
1.4
1.8
a
0.6
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
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-2
-1
-3
-4
V
GS(th)
(V)
0
max
typ
min
I
D
= -0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
-10
-1
-10
2
-10-1
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10
3
10
2
10
4
C
(pF)
10
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB48EPA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 27 March 2018 8 / 14
