IRF7821GPbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.0 9.1
mΩ
––– 9.5 12.5
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– - 4.9 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 22 ––– ––– S
Q
g
Total Gate Charge ––– 9.3 14
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC
Q
gd
Gate-to-Drain Charge ––– 2.9 –––
Q
godr
Gate Charge Overdrive ––– 3.1 ––– See Fig. 16
Q
sw
Switch Char
e (Q
gs2
+ Q
gd
)
––– 3.7 –––
Q
oss
Output Charge ––– 6.1 ––– nC
t
d(on)
Turn-On Delay Time ––– 6.3 –––
t
r
Rise Time ––– 2.7 –––
t
d(off)
Turn-Off Delay Time ––– 9.7 ––– ns
t
f
Fall Time ––– 7.3 –––
C
iss
Input Capacitance ––– 1010 –––
C
oss
Output Capacitance ––– 360 ––– pF
C
rss
Reverse Transfer Capacitance ––– 110 –––
Avalanche Characteristics
Parameter Units
E
AS
n
e
u
se
va
anc
e
ner
mJ
I
AR
va
anc
e
urrent
A
Diode Characteristics
Parameter Min. T
p. Max. Units
I
S
Continuous Source Current ––– ––– 3.1
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 100
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 28 42 ns
Q
rr
Reverse Recovery Charge ––– 23 35 nC
–––
I
D
= 10A
V
GS
= 0V
V
DS
= 15V
V
GS
= 4.5V, I
D
= 10A
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 250µA
Clamped Inductive Load
V
DS
= 15V, I
D
= 10A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
T
J
= 25°C, I
F
= 10A, V
DD
= 20V
di/dt = 100A/
s
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 10A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
Conditions
Max.
44
10
ƒ = 1.0MHz