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IRF7821GTRPBF

P1-P3P4-P6P7-P9P10-P10
IRF7821GPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 5 10 15 20
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15V
I
D
= 10A
0.0 0.5 1.0 1.5
V
SD
, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0.1 1.0 10.0 100.0 1000.0
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
IRF7821GPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.4
1.8
2.2
2.6
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
0
2
4
6
8
10
12
14
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
IRF7821GPbF
6 www.irf.com
Fig 13b. Unclamped Inductive Waveforms
Fig 13a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
4.5A
8.0A
BOTTOM
10A
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
f
t
r
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
Fig 12. On-Resistance Vs. Gate Voltage
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 13A
P1-P3P4-P6P7-P9P10-P10

IRF7821GTRPBF

Mfr. #:
Buy IRF7821GTRPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors MOSFET MOSFT 30V 13.6A 9.1mOhm 9.3nC
Lifecycle:
New from this manufacturer.
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