74HCU04
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4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
(V)
– 55 to
25_C
v 85_C v 125_C
Unit
V
IH
Minimum High−Level Input
Voltage
V
out
= 0.5 V*
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
1.7
2.5
3.6
4.8
1.7
2.5
3.6
4.8
l.7
2.5
3.6
4.8
V
V
IL
Maximum Low−Level Input
Voltage
V
out
= V
CC
– 0.5 V*
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
0.3
0.5
0.8
1.1
0.3
0.5
0.8
1.1
0.3
0.5
0.8
1.1
V
V
OH
Minimum High−Level Output
Voltage
V
in
= GND
|I
out
| v 20 mA
2.0
4.5
6.0
1.8
4.0
5.5
1.8
4.0
5.5
1.8
4.0
5.5
V
V
in
= GND |I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
3.0
4.5
6.0
2.36
3.86
5.36
2.26
3.76
5.26
2.20
3.70
5.20
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
CC
|I
out
| v 20 mA
2.0
4.5
6.0
0.2
0.5
0.5
0.2
0.5
0.5
0.2
0.5
0.5
V
V
in
= V
CC
|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
3.0
4.5
6.0
0.32
0.32
0.32
0.32
0.37
0.37
0.32
0.40
0.40
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 mA
6.0 2.0 20 40
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. For V
CC
= 2.0 V, V
out
= 0.2 V or V
CC
− 0.2 V.
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Guaranteed Limit
Symbol Parameter
V
CC
(V)
– 55 to
25_C
v 85_C v 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
70
40
14
12
90
45
18
15
105
50
21
18
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
C
in
Maximum Input Capacitance — 10 10 10 pF
3. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
4. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
C
PD
Power Dissipation Capacitance (Per Inverter)*
Typical @ 25°C, V
CC
= 5.0 V
pF
15
5. Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
