AOT29S50/AOB29S50/AOTF29S50
Symbol Min Typ Max Units
500 - -
550 600 -
- - 1
- 10 -
I
GSS
Gate-Body leakage current
- - ±100
nΑ
V
GS(th)
Gate Threshold Voltage
2.6 3.3 3.9 V
- 0.13 0.15 Ω
- 0.34 0.4 Ω
V
SD
- 0.85 - V
I
S
Maximum Body-Diode Continuous Current - - 29 A
I
SM
- - 120 A
C
iss
- 1312 - pF
C
oss
- 88 - pF
C
o(er)
- 78 - pF
C
o(tr)
- 227 - pF
C
rss
- 2.5 - pF
R
g
- 4.8 - Ω
Q
g
- 26.6 - nC
Q
gs
- 6.2 - nC
Q
gd
- 9.2 - nC
t
D(on)
- 28 - ns
t
r
- 39 - ns
t
D(off)
- 103 - ns
t
f
- 40 - ns
t
rr
- 387
- ns
I
rm
- 29.6
- A
Q
rr
- 7.3
-
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Peak Reverse Recovery Current
I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
V
V
GS
=10V, I
D
=14.5A, T
J
=150°C
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
µA
V
DS
=0V, V
GS
=±30V
V
DS
=500V, V
GS
=0V
V
DS
=5V,I
D
=250µA
V
DS
=400V, T
J
=150°C
Zero Gate Voltage Drain Current
Body Diode Reverse Recovery Charge
I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
Maximum Body-Diode Pulsed Current
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Body Diode Reverse Recovery Time
I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
Reverse Transfer Capacitance
BV
DSS
V
GS
=10V, V
DS
=400V, I
D
=14.5A,
R
G
=25Ω
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=400V, I
D
=14.5A
Gate Source Charge
Gate Drain Charge
V
GS
=10V, I
D
=14.5A, T
J
=25°C
SWITCHING PARAMETERS
I
DSS
Effective output capacitance, time
related
I
R
DS(ON)
Static Drain-Source On-Resistance
I
S
=14.5A,V
GS
=0V, T
J
=25°C
Diode Forward Voltage
Input Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Output Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
D
=250µA, V
GS
=0V, T
J
=150°C
Effective output capacitance, energy
related
H
V
GS
=0V, V
DS
=0 to 400V, f=1MHz
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, I
AS
=4.5A, V
DD
=150V, Starting T
J
=25°C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
Rev0: March 2012 www.aosmd.com Page 2 of 7
