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AOTF29S50L

P1-P3P4-P6P7-P7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30 35 40
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
V
GS
(Volts)
V
DS
=400V
I
D
=14.5A
1
10
100
1000
10000
0 100 200 300 400 500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
1000
1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)29S50 (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF29S50(Note F)
10
µ
s
10ms
1ms
0.1sDC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
1s
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0
2
4
6
8
10
0 100 200 300 400 500
V
DS
(Volts)
Figure 10: Coss stroed Energy
Eoss(uJ)
E
oss
Rev0: March 2012 www.aosmd.com Page 4 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 15: Current De-rating (Note B)
Current rating I
D
(A)
0
100
200
300
400
500
600
700
25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Avalanche energy
E
AS
(mJ)
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF29S50L(Note F)
10
µ
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
1s
Rev0: March 2012 www.aosmd.com Page 5 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)29S50 (Note F)
Z
θ
θ
θ
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
on
T
P
D
Single Pulse
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF29S50 (Note F)
Z
θ
θ
θ
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF29S50L (Note F)
Z
θ
θ
θ
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev0: March 2012 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AOTF29S50L

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Description:
MOSFET N-CH 500V 29A TO220F
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