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NUP2105LT1G

P1-P3P4-P6P7-P7
Semiconductor Components Industries, LLC, 2003
October, 2017 − Rev. 9
1 Publication Order Number:
NUP2105L/D
NUP2105L, SZNUP2105L
ESD Protection Diode
Dual Line CAN Bus Protector
The SZ/NUP2105L has been designed to protect the CAN
transceiver in high−speed and fault tolerant networks from ESD and
other harmful transient voltage events. This device provides
bidirectional protection for each data line with a single compact
SOT−23 package, giving the system designer a low cost option for
improving system reliability and meeting stringent EMI requirements.
Features
• 350 W Peak Power Dissipation per Line (8/20 msec Waveform)
• Low Reverse Leakage Current (< 100 nA)
• Low Capacitance High−Speed CAN Data Rates
• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4, 30 kV
− IEC 61000−4−4 (EFT): 40 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)
• ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A
• ISO 7637−3 Pulse 3a,b: Repetitive Load Switching Fast Transients,
50 A
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Industrial Control Networks
♦ Smart Distribution Systems (SDS
)
♦ DeviceNet
• Automotive Networks
♦ Low and High−Speed CAN
♦ Fault Tolerant CAN
www.onsemi.com
SOT−23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
MARKING DIAGRAM
27E = Device Code
M = Date Code
G = Pb−Free Package
SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
1
27EMG
G
CAN
Transceiver
CAN_H
CAN_L
NUP2105L
CAN Bus
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
NUP2105L, SZNUP2105L
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C, unless otherwise specified)
Symbol
Rating Value Unit
PPK Peak Power Dissipation
8/20 ms Double Exponential Waveform (Note 1)
350
W
T
J
Operating Junction Temperature Range −55 to 150 °C
T
J
Storage Temperature Range −55 to 150 °C
T
L
Lead Solder Temperature (10 s) 260 °C
ESD Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
16
400
30
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Symbol
Parameter Test Conditions Min Typ Max Unit
V
RWM
Reverse Working Voltage (Note 2) 24 − − V
V
BR
Breakdown Voltage I
T
= 1 mA (Note 3) 26.2 − 32 V
I
R
Reverse Leakage Current V
RWM
= 24 V − 1.5 100 nA
V
C
Clamping Voltage
I
PP
= 5 A (8/20 ms Waveform)
(Note 4)
− − 40 V
V
C
Clamping Voltage
I
PP
= 8 A (8/20 ms Waveform)
(Note 4)
− − 44 V
I
PP
Maximum Peak Pulse Current
8/20 ms Waveform (Note 4)
− − 8.0 A
CJ Capacitance V
R
= 0 V, f = 1 MHz (Line to GND) − − 30 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surge protection devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
ORDERING INFORMATION
Device Package Shipping
†
NUP2105LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZNUP2105LT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
NUP2105LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZNUP2105LT3G* SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
NUP2105L, SZNUP2105L
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
Figure 1. Pulse Waveform, IEC 61000−4−5 8/20 ms
110
90
80
70
60
50
40
30
20
10
0
0 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
t
r
= 8 ms
t
d
= 20 ms
t
d
= I
PP
/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
12.0
10.0
8.0
6.0
4.0
2.0
0.0
25 40
V
C
, CLAMPING VOLTAGE (V)
I
PP
, PEAK PULSE CURRENT (A)
30 35 45 50
100
10 20
c−t
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
25
02
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
46810
125°C
20
15
35
10
30
25°C
−40°C
PULSE WAVEFORM
8 x 20 ms per Figure 1
f = 1.0 MHz, Line to Ground
0
5
10
15
20
25
30
35
40
45
50
20 22 24 26 28 30 32 34
Figure 4. V
BR
versus I
T
Characteristics
−55°C
T
A
= +150°C
25°C
65°C
V
BR
, VOLTAGE (V)
I
T
, (mA)
Figure 5. I
R
versus Temperature Characteristics
0
5
10
15
20
25
024681012
I
L
, LEAKAGE CURRENT (nA)
V
R
, REVERSE BIAS VOLTAGE (V)
0
20
40
60
80
100
120
−60 −30 0 30 60 90 120 150 180
Figure 6. Temperature Power Dissipation Derating
TEMPERATURE (°C)
PERCENT DERATING (%)
14 16
25°C, −55°C
T
A
= 150°C
125°C
65°C
P1-P3P4-P6P7-P7

NUP2105LT1G

Mfr. #:
Buy NUP2105LT1G
Manufacturer:
ON Semiconductor
Description:
TVS Diode Arrays 27V CAN BUS Protection
Lifecycle:
New from this manufacturer.
Delivery:
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