VS-50TPS12LHM3
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Vishay Semiconductors
Revision: 23-Feb-18
2
Document Number: 96108
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum average on-state current I
T(AV)
T
C
= 82 °C, 180° conduction half sine wave - 50
A
Maximum continuous RMS on-state
current as AC switch
I
T(RMS)
-79
Peak, one-cycle non-repetitive surge current I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial T
J
= T
J
maximum
-530
10 ms sine pulse, no voltage reapplied - 630
I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied - 1405
A
2
s
10 ms sine pulse, no voltage reapplied - 1986
I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C - 19 850 A
2
s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
-0.89
V
High level value of threshold voltage V
T(TO)2
-0.97
Low level value of on-state slope resistance r
t1
-6.77
m
High level value of on-state slope resistance r
t2
-6.32
On-state voltage V
T
50 A, T
J
= 25 °C 1.2 1.32
V
100 A, T
J
= 25 °C 1.4 1.6
Rate of rise of turned-on current di/dt T
J
= 25 °C - 150 A/µs
Holding current I
H
Anode supply = 6 V, resistive load, T
J
= 25 °C
-300
mA
Latching current I
L
-350
Reverse and direct leakage current I
RRM
/I
DRM
T
J
= 25 °C - 0.05
T
J
= 125 °C - 10
Rate of rise of off-state voltage dv/dt T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
-k = -1000V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Peak gate power P
GM
10 ms sine pulse, no voltage reapplied
-10
W
Average gate power P
G(AV)
-2.5
Peak gate current I
GM
-2.5A
Peak negative gate voltage -V
GM
-10
V
Required DC gate voltage to trigger V
GT
T
J
= -40 °C
Anode supply = 6 V resistive load
-1.6
T
J
= 25 °C - 1.5
T
J
= 125 °C - 1.1
Required DC gate to trigger I
GT
T
J
= -40 °C
Anode supply = 6 V resistive load
- 160
mAT
J
= 25 °C 45 100
T
J
= 125 °C - 70
DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= rated value
-0.25V
DC gate current not to trigger I
GD
-4.5mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Turn-on time t
gt
I
T
= 50 A, V
D
= 50 % V
DRM
, I
gt
= 300 mA, T
J
= 25 °C 1.5 -
µs
Turn-off time t
q
I
T
= 50 A, V
D
= 80 % V
DRM
, dV/dt = 20 V/s, t
p
= 200 s
I
gt
= 100 mA, dI/dt = 10 A/s, V
R
= 100 V, T
J
= 125 °C
85 -
