VS-50TPS12LHM3

VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
4
Document Number: 96108
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
260
310
360
410
460
510
560
110100
Peak Half Sine Wave On- state Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
j
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
250
300
350
400
450
500
550
600
650
0.01 0.1 1
Peak Half Sine Wave On- state Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
Maximum non repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial T
j
= 150 °C
No voltage reapplied
rated V
RRM
reapplied
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous On- state Current (A)
Instantaneous On - state Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
0.0010.0001 0.01 0.1 1
10
100
1000
Instantaneous Gate Voltage (V)
Instantaneous Gate Current (A)
(4) (3) (2) (1)
I
GD
V
GD
Frequency limited by PG(AV)
50TPS12L Series
T
J
= 150 °C
T
J
= 25 °C
T
J
= - 40 °C
a)
b)
Rectangular gate pulse
a) Recommended load line for rated dI/dt: 20 V, 30 Ω
t
r
= 0.5 µs, t
p
≥ 6 µs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω
t
r
= 1 µs, t
p
≥ 6 µs
(1) PGM = 100 W, t
p
= 500 µs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
5
Document Number: 96108
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-50TPS12LHM3 25 contact factory Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions TO-247AD 3L www.vishay.com/doc?95626
Part marking information TO-247AD 3L www.vishay.com/doc?95007
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Transient Thermal Impedance
(°C/W)
Square Wave Pulse Duration (s)
0.17
Single Pulse
0.50
0.33
0.08
0.25
2
- Current code (50 = 50 A)
1
- Vishay Semiconductors product
3
- Circuit configuration:
4
-
5
T = thyristor
- Type of silicon:
6
- Voltage code (12 = 1200 V)
P = TO-247AD package
S = standard recovery rectifier
7
-
Package L = long lead
8
-
H = AEC-Q101 qualified
9
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Device code
51 32 4 6 7 9
VS- 50 T P S 12 L M3
8
H
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 08-Feb-17
1
Document Number: 91000
Disclaimer
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VS-50TPS12LHM3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCRs 50A If; 1200V Vr TO-247AD 3L
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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