CAV25M01
www.onsemi.com
2
MARKING DIAGRAMS
25M01A = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
25M01A
AYMXXX
(SOIC−8)
(TSSOP−8)
SM1A
AYMXXX
SM1A = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
= Assembly Lot Number
G = Pb−Free Microdot
G
25M = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
25M
AYW
(WLCSP−8)
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter Ratings Units
Operating Temperature −45 to +130 °C
Storage Temperature −65 to +150 °C
Voltage on any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter Min Units
N
END
(Note 3) Endurance 1,000,000 Program / Erase Cycles
T
DR
Data Retention 100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V
CC
= 5 V, 25°C
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS (V
CC
= 2.5 V to 5.5 V, T
A
= −40°C to +125°C, unless otherwise specified)
Symbol
Parameter Test Conditions Min Max Units
I
CCR
Supply Current
(Read Mode)
Read, SO open f
SCK
= 10 MHz 3 mA
I
CCW
Supply Current
(Write Mode)
Write, CS = V
CC
3 mA
I
SB1
Standby Current V
IN
= GND or V
CC
, CS = V
CC
, WP = V
CC
,
HOLD
= V
CC
, V
CC
= 5.5 V
3
mA
I
SB2
Standby Current V
IN
= GND or V
CC
, CS = V
CC
, WP = GND,
HOLD
= GND, V
CC
= 5.5 V
5
mA
I
L
Input Leakage Current V
IN
= GND or V
CC
−2 2
mA
I
LO
Output Leakage Current CS = V
CC
, V
OUT
= GND or V
CC
−2 2
mA
V
IL
Input Low Voltage −0.5 0.3V
CC
V
V
IH
Input High Voltage 0.7V
CC
V
CC
+ 0.5 V
V
OL
Output Low Voltage I
OL
= 3.0 mA 0.4 V
V
OH
Output High Voltage I
OH
= −1.6 mA V
CC
− 0.8V V
