DMP25H18DLFDE-7 Datasheet DMP25H18DLFDE-7, DMP25H18DLFDE-13 | P1-P3

DMP25H18DLFDE

D

atasheet number: DS37298 Rev. 3 - 2

1 of 7

www.diodes.com

January 2015

DM

P25H18DLFDE

ADVANCE INFO R MA T I O N

ADVANCED I NF O R M A T I O N

250V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON) max

I

D max

T

A

= +25°C

-250V

14Ω @ V

GS

= -10V

-0.26A

18Ω @ V

GS

= -3.5V

-0.23A

Description

This new generation MOSFET is designed to minimize the on-

state

resistance (R

DS(ON)

) and yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

Applications

• General Purpose Interfacing Switch

• Load Switching

• Battery Management Application

• Power Management Functions

Features

• 0.6mm Profile – Ideal for Low-Profile Applications

• PCB Footprint of 4mm

2

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: U-DFN2020-6

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0065 grams (Approximate)

Ordering Information

(Note 4)

Part Number

Marking

Reel S

ize (inches)

Quantity per R

eel

DMP25H18DLFDE-7 H8 7 3,000

DMP25H18DLFDE-13 H8 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

U-DFN2020-6

Date Code Key

Year

2014

2015

2016

2017

201

8

201

9

20

21

Code

B C D E F G H I

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 2 3 4 5 6 7 8 9 O N D

U-DFN2020-6

Bottom View

Pin Out

H8 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: B = 2014)

M = Month (ex: 9 = September)

Equivalent Circuit

D

S

G

Bottom View

Pin1

e4

\

H8

YM

DMP25H18DLFDE

D

atasheet number: DS37298 Rev. 3 - 2

2 of 7

www.diodes.com

January 2015

DM

P25H18DLFDE

ADVANCE INFO R MA T I O N

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Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

-250 V

Gate-Source Voltage

V

GSS

±40 V

Continuous Drain Current (Note 6) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-0.26

-0.21

A

Pulsed Drain Current (10µs pulse, duty cycle 1%)

I

DM

-0.8 A

Maximum Body Diode Continuous Current (Note 6)

I

S

1.2 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

(Note 5)

P

D

0.6

W

(Note 6) 1.4

Thermal Resistance, Junction to Ambient

(Note 5)

R

θ

JA

191

°C/W

(Note 6) 86

Thermal Resistance, Junction to Case

(Note 6)

R

θ

JC

17

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

-250 — — V

V

GS

= 0V, I

D

= -1mA

Zero Gate Voltage Drain Current T

J

= +25°C I

DSS

— —

-1 µA

V

DS

= -250V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±40V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

-0.5 -1.7 -2.5 V

V

DS

= V

GS

, I

D

= -1mA

Static Drain-Source On-Resistance

R

DS (ON)

—

10 14

Ω

V

GS

= -10V, I

D

= -200mA

13 18

V

GS

= -3.5V, I

D

= -100mA

Diode Forward Voltage

V

SD

—

-0.8 -1.2 V

V

GS

= 0V, I

S

= -200mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

C

iss

— 81 —

pF

V

DS

= -25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 14 —

pF

Reverse Transfer Capacitance

C

rss

— 4 —

pF

Gate Resistance

R

g

— 13 —

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= -10V) Q

g

— 2.8 —

nC

V

DS

= -25V, I

D

= -200mA

Gate-Source Charge

Q

gs

— 0.3 —

nC

Gate-Drain Charge

Q

gd

— 0.6 —

nC

Turn-On Delay Time

t

D(on)

— 7.5 —

ns

V

DS

= -30V, I

D

= -200mA

V

GS

= -10V, R

G

= 50Ω

Turn-On Rise Time

t

r

— 25 —

ns

Turn-Off Delay Time

t

D(off)

— 124 —

ns

Turn-Off Fall Time

t

f

— 95 —

ns

Reverse Recovery Time

t

rr

— 85 —

ns

I

F

= -1.0A, di/dt = 100A/µs

Reverse Recovery Charge

Q

rr

— 294 —

uC

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

.

DMP25H18DLFDE

D

atasheet number: DS37298 Rev. 3 - 2

3 of 7

www.diodes.com

January 2015

DM

P25H18DLFDE

ADVANCE INFO R MA T I O N

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V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 1 2 3 4 5 6 7 8 9 10

V = -2.2V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -3.5V

GS

V = -4.5V

GS

V = -4.0V

GS

V = -20V

GS

V = -10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0

0.1

0.2

0.3

0 0.5 1 1.5 2

2.5

3

3.5

4

4.5

5

5.5

6

T = 150 C

A

°

T = 125 C

A

°

T = 85 C

A

°

T = 25 C

A

°

T = -55 C

A

°

V = -10V

DS

I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

2

4

6

8

10

12

14

16

18

20

0 0.1 0.2 0.3 0.4

0.5

0.6

0.7

0.8

V = -4.5V

GS

V = -10V

GS

V = -20V

GS

I , DRAIN SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

5

10

15

20

25

30

0

0.1

0.2

0.3

0.4

0.5

0.6

T = -55 C

A

°

T = 25 C

A

°

T = 85 C

A

°

T = 125 C

A

°

T = 150 C

A

°

V = -4.5V

GS

DMP25H18DLFDE-7

DMP25H18DLFDE-7

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