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DMP25H18DLFDE-7

P1-P3P4-P6P7-P7
DMP25H18DLFDE
D
atasheet number: DS37298 Rev. 3 - 2
4 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DM
P25H18DLFDE
ADVANCE INFO R MA T I O N
ADVANCED I NF O R M A T I O N
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.8
1.2
1.6
2
2.4
-50
-25
0 25 50 75
100
125
150
V = -4.5V
I = -0.2A
GS
D
V = -10V
I = -0.3A
GS
D
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0
5
10
15
20
25
30
-50
-25
0 25 50 75
100
125
150
V = -10V
I = A
GS
D
-0.3
V = 5V
I = A
GS
D
-4.
-0.2
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
GS(TH)
1
1.2
1.4
1.6
1.8
2
-50
-25
0 25 50 75
100
125
150
-I = 1mA
D
-I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.3
0.6
0.9
1.2
1.5
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
C
,
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
T
V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
1
10
100
1000
0 5 10 15 20 25 30 35 40
C
oss
C
rss
f = 1MHz
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
V
,
G
A
T
E
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
GS
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1
1.5
2
2.5
3
V = -25V
I = -200mA
DS
D
DMP25H18DLFDE
D
atasheet number: DS37298 Rev. 3 - 2
5 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DM
P25H18DLFDE
ADVANCE INFO R MA T I O N
ADVANCED I NF O R M A T I O N
V , DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0.001
0.01
0.1
1
10
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
r
(
t
)
,
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
R (t) = r(t) * R
R = 192°C/W
Duty Cycle, D = t1/ t2
θ θ
θ
JA JA
JA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
DMP25H18DLFDE
D
atasheet number: DS37298 Rev. 3 - 2
6 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DM
P25H18DLFDE
ADVANCE INFO R MA T I O N
ADVANCED I NF O R M A T I O N
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U
-
DFN2020
-
6
Type E
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0 0.05 0.03
A3
— — 0.15
b
0.25 0.35 0.30
b1
0.185 0.285 0.235
D
1.95 2.05 2.00
D2
0.85 1.05 0.95
E
1.95 2.05 2.00
E2
1.40 1.60 1.50
— — 0.65
L
0.25 0.35 0.30
L1
0.82 0.92 0.87
K1
— — 0.305
K2
— — 0.225
Z
— — 0.20
All Dimensions in mm
U-DFN2020-6 Type E
Dimensions
Value
(in mm)
C
0.650
X
0.400
X1
0.285
X2
1.050
Y
0.500
Y1
0.920
Y2
1.600
Y3
2.300
A1
Z(4X)
b1
L1
K1
K2
D
D2
E
e
b(6X)
L(2X)
E2
A
A3
X1
Y3
X (6x)
C
X2
Y1
Y2
Y (2x)
P1-P3P4-P6P7-P7

DMP25H18DLFDE-7

Mfr. #:
Buy DMP25H18DLFDE-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC
Lifecycle:
New from this manufacturer.
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