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MADP-011027-14150T

P1-P3P4-P6P7-P9
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
MADP-011027-14150T
1
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
1
Features
 3 Terminal LPF Broadband Shunt Structure
 50 MHz - 12 GHz Broadband Frequency
 >100 W Peak Power Handling
 < 0.1 dB Shunt Insertion Loss
 >23 dB Shunt Isolation
 < 45°C/W Thermal Resistance
 Lead-Free 1.5 x 1.2 mm 6-lead DFN Package
 RoHS* Compliant and 260
o
C Reflow
Description
The MADP-011027 is a lead-free 1.5 x 1.2 mm DFN
surface mount plastic packaged that provides both
low and high signal frequency operation from
50 MHz to 12 GHz. The higher breakdown voltage
and lower thermal resistance of the PIN diode
provides peak power handling in excess of 100 W.
This device is ideally suitable for usage in higher
incident power switches, phase shifters, attenuators,
and limiter microwave circuits over a broad
frequency where higher performance surface mount
diode assemblies are required.
Ordering Information
1,2
Part Number Package
MADP-011027-14150T 3000 piece reel
MADP-011027-000SMB sample board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
Functional Schematic
Pin Configuration
3
Pin No. Pin Name Description
1 RF
IN
RF Input
2 GND Ground
3 GND Ground
4 GND Ground
5 GND Ground
6 RF
OUT
RF Output
7 Paddle
4
Ground
3. M/A-COM Technology Solutions recommends connecting
unused package pins to ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC, and thermal ground.
1. Reference Application Note M513 for reel size information.
2. All RF Sample boards include 5 loose parts.
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
MADP-011027-14150T
2
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
2
Electrical Specifications: T
A
= +25°C
Absolute Maximum Ratings
9,10
Parameter Absolute Maximum
D.C. Forward Voltage @
+250 mA
1.2 V
D.C. Forward Current 250 mA
D.C. Reverse Voltage |-100V|
Junction Temperature
11
+175°C
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
Re-flow Temperature +260°C for 360 seconds
9. Exceeding any one or combination of these limits may cause
permanent damage to this device.
10. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
11. Operating at nominal conditions with T
J
≤ +140°C will ensure
MTTF > 1 x 10E6 hours.
Parameter Test Conditions Units Min. Typ. Max.
Forward Voltage +50 mA D.C. V 0.7 0.9 1.1
Reverse Leakage Current -100 V D.C. ηA — |- 20| |-1000|
Total Capacitance
5
-50 V @ 1 MHz pF — 0.24 0.35
Series Resistance
6
+10 mA @ 1 GHz Ω — 1.9 2.6
Parallel Resistance
6
-Vdc = -40 V, @ 100 MHz KΩ — 500 —
Minority Carrier Lifetime
+If = 10 mA / -Ir = -6 mA
(50% Control Voltage, 90% Output Voltage)
µS — 1.0 2.0
C.W. Thermal Resistance
( Infinite Heat Sink at Thermal
Ground Plane)
IHigh = 4 A, Ilow = 10 mA @ 10 kHz ºC/W — 45 —
Power Dissipation
7,8
( Infinite Heat Sink at Thermal
Ground Plane)
+If = 50 mA @ 1 GHz W — 3.3 —
Insertion Loss F = 1 GHz, -Vdc = -10 V dB -0.1
Isolation F = 1 GHz, +Ibias = +10 mA dB -23 -21
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these Class 2 devices.
5. Ct (Total Capacitance) = CJ (Junction Capacitance) + Cp (Parasitic Package Capacitance).
6. Rs and Rp are measured on an HP4291A Impedance Analyzer.
7. De-rate power dissipation linearly by -22.2 mW/ºC to 0 W @ +175ºC: Pd (T) = Pd (+25ºC) - ∆P = Pd (+25º) - (22.2 mV/ºC) (∆T).
8. PD = ∆Tj / Θ or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
MADP-011027-14150T
3
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
3
500 - 5000 MHz Parts List
13
PCB Layout
PCB Schematic
12. R1 is not needed when using the recommended ferrite FB1.
13. Max DC voltage with recommended components not to
exceed 100 V.
Part Value Case Style
C1 62 pF 0402
C2, C3 100 pF 0402
FB1 470 Ω @ 1 GHz 0402
R1 150 Ω 0402
L1 82 nH 0402
Devices may be soldered using standard
Pb60/Sn40, or RoHS compliant solders. Leads
are plated NiPdAuAg to ensure an optimum
solderable connection.
For recommended Sn/Pb and RoHS soldering
profile See Application Note M538
on the MACOM
website.
Assembly Recommendations
Cleanliness and Storage
These devices should be handled and stored in a
clean environment. Ends of the device are
NiPdAuAg plated for greater solderability. Exposure
to high humidity (>80%) for extended periods may
cause the surface to oxidize. Caution should be
taken when storing devices for long periods.
General Handling
Device can be handled with tweezers or vacuum
pickups and are suitable for use with automatic
pick-and-place equipment.
P1-P3P4-P6P7-P9

MADP-011027-14150T

Mfr. #:
Buy MADP-011027-14150T
Manufacturer:
MACOM
Description:
PIN Diodes .5-12GHz Ls=.4nH 100W Pk
Lifecycle:
New from this manufacturer.
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