High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
MADP-011027-14150T
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Applications Section
Schematic of High Power SP2T Shunt Switch using MADP-011027-14150T PIN Diodes
F = Octave Bandwidth from 1 to 12 GHz
Pinc = +40 dBm CW
Pinc = +50 dBm, 10 µS PW, 1 % Duty
L = 11.807 / (
εeff
½
* F * 4 ) inches, θ = β * L = ( 2 π / λ ) * L = 90 °
Frequency is in GHz,
εeff is Effective Dielectric Constant of Transmission Line Medium
RF State B1 Bias B2 Bias
J0-J1 Low Loss &
J0-J2 Isolation
-50 V @ 0 mA +1 V @ +20 mA
J0-J2 Low Loss &
J0-J1 Isolation
+1 V @ +20 mA -50 V @ 0 mA
