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Pixel
Figure 3. Pixel Architecture
Top View
Direction
of
Charge
Transfer
True Two Phase Burried Channel VCCD
Lightshield over VCCD not shown
V1
Photodiode
V2
Transfer
Gate
Direction of
Charge
Transfer
V1 V2 V1
n
n
n n
p Well (GND)
Cross Section Down Through VCCD
n Substrate
p
V1
n
p+
Light Shield
p
p
n
p
Cross Section Through
Photodiode and VCCD Phase 1
Photodiode
p
p
V2
n
p+
Light Shield
p
p
n
n Substrate
p
Cross Section Through Photodiode
and VCCD Phase 2 at Transfer Gate
Transfer
Gate
Cross Section Showing Lenslet
Lenslet
VCCD VCCD
Light Shield Light Shield
Photodiode
Red Color Filter
NOTE: Drawings not scale.
7.4 mm
7.4 mm
n Substrate
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electronhole pairs within the individual silicon
photodiodes. These photoelectrons are collected locally by
the formation of potential wells at each photosite. Below
photodiode saturation, the number of photoelectrons
collected at each pixel is linearly dependent upon light level
and exposure time and nonlinearly dependent on
wavelength. When the photodiodes charge capacity is
reached, excess electrons are discharged into the substrate to
prevent blooming.
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Vertical to Horizontal Transfer
Figure 4. Vertical to Horizontal Transfer Architecture
Top View
Direction of
Vertical
Charge
Transfer
V1
V2
V1
Photodiode
V2
Transfer
Gate
Fast
Line
Dump
H1S
Direction of
Horizontal
Charge Transfer
Lightshield
Not Shown
H2B
H2S
H1B
When the V1 and V2 timing inputs are pulsed, charge in
every pixel of the VCCD is shifted one row towards the
HCCD. The last row next to the HCCD is shifted into the
HCCD. When the VCCD is shifted, the timing signals to the
HCCD must be stopped. H1 must be stopped in the high state
and H2 must be stopped in the low state. The HCCD
clocking may begin T
HD
ms after the falling edge of the V1
and V2 pulse.
Charge is transferred from the last vertical CCD phase into
the H1S horizontal CCD phase. Refer to Figure 36 for an
example of timing that accomplishes the vertical to
horizontal transfer of charge.
If the fast line dump is held at the high level (FDH) during
a vertical to horizontal transfer, then the entire line is
removed and not transferred into the horizontal register.
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Horizontal Register to Floating Diffusion
Figure 5. Horizontal Register to Floating Diffusion Architecture
n+
R OG H2S H1S H1B H2S H2B H1S
n n n
RD
Floating
Diffusion
n (burried channel)
n
n+
p (GND)
n (SUB)
H2B
The HCCD has a total of 2124 pixels. The 2112 vertical
shift registers (columns) are shifted into the center 2112
pixels of the HCCD. There are 12 pixels at both ends of the
HCCD, which receive no charge from a vertical shift
register. The first 12 clock cycles of the HCCD will be empty
pixels (containing no electrons). The next 28 clock cycles
will contain only electrons generated by dark current in the
VCCD and photodiodes. The next 2056 clock cycles will
contain photoelectrons (image data). Finally, the last 28
clock cycles will contain only electrons generated by dark
current in the VCCD and photodiodes. Of the 28 dark
columns, the first and last dark columns should not be used
for determining the zero signal level. Some light does leak
into the first and last dark columns. Only use the center 26
columns of the 28 column dark reference.
When the HCCD is shifting valid image data, the timing
inputs to the electronic shutter (SUB), VCCD (V1, V2), and
fast line dump (FD) should be not be pulsed. This prevents
unwanted noise from being introduced. The HCCD is a type
of charge coupled device known as a pseudotwo phase
CCD. This type of CCD has the ability to shift charge in two
directions. This allows the entire image to be shifted out to
the video L output, or to the video R output (left/right image
reversal). The HCCD is split into two equal halves of 1068
pixels each. When operating the sensor in single output
mode the two halves of the HCCD are shifted in the same
direction. When operating the sensor in dual output mode
the two halves of the HCCD are shifted in opposite
directions. The direction of charge transfer in each half is
controlled by the H1BL, H2BL, H1BR, and H2BR timing
inputs.

KAI-4011-AAA-CR-BA

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Image Sensors INTERLINE CCD IMAGE SENSOR
Lifecycle:
New from this manufacturer.
Delivery:
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