Maximum rating STPIC6D595
4/21 Doc ID 13663 Rev 3
2 Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
2.1 Absolute maximum ratings
2.2 Thermal data
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
Logic supply voltage (See Note 1)7V
V
I
Logic input voltage range -0.3 to 7 V
V
DS
Power DMOS drain to source voltage (See Note 2)20V
I
D
Pulsed drain current, each output, all output ON
(T
C
= 25 °C)
250 mA
I
D
Continuous current, each output, all output ON
(T
C
= 25 °C)
100 mA
I
D
Peak drain current single output
(T
C
= 25 °C) (See Note 3)
250 mA
P
d
Continuous total dissipation (T
C
25 °C) 1087 mW
P
d
Continuous total dissipation (T
C
= 125 °C) 217 mW
T
J
Operating virtual junction temperature range -40 to +150 °C
T
C
Operating case temperature range -40 to +125 °C
T
stg
Storage temperature range -65 to +150 °C
T
L
Lead temperature 1.6 mm (1/16 inch) from case for 10
seconds
260 °C
Table 3. Thermal data
Symbol Parameter Package Values Unit
R
th(JA)
Thermal resistance junction-ambient
DIP-16 85
°C/WSO-16 107
TSSOP16 143
STPIC6D595 Maximum rating
Doc ID 13663 Rev 3 5/21
2.3 Recommended operating conditions
Table 4. Recommended operating conditions
Symbol Parameter Min Max Unit
V
CC
Logic supply voltage 4.5 5.5 V
V
IH
High level input voltage 0.85V
CC
V
CC
V
V
IL
Low level input voltage 0 0.15V
CC
V
I
DP
Pulse drain output current
(T
C
= 25 °C, V
CC
= 5 V, all outputs ON)
(see Note 3, Note 4)
250 mA
t
su
Set-up time, SER IN high before SRCK
(see Figure 4 and Figure 8)
10 ns
t
h
Hold time, SER IN high after SRCK
(see Figure 4, Figure 7, Figure 8)
10 ns
t
W
Pulse duration (see Figure 8)40ns
T
C
Operating case temperature -40 125 °C
Electrical characteristics STPIC6D595
6/21 Doc ID 13663 Rev 3
3 Electrical characteristics
3.1 DC characteristics
V
CC
= 5 V, T
C
= 25 °C, unless otherwise specified.
Table 5. DC characteristics
Symbol Parameter Test conditions Min Typ Max Unit
V
(BR)DSX
Drain-to-source
breakdown voltage
I
D
= 1 mA 20 V
V
SD
Source-to-drain diode
forward voltage
I
F
= 100 mA 0.85 1.2 V
V
OH
High level output
voltage SER OUT
I
OH
= -20 μA V
CC
= 4.5 V 4.4 4.49 V
I
OH
= -4 mA V
CC
= 4.5 V 4 V
V
OL
Low level output
voltage SER OUT
I
OH
= 20 μA V
CC
= 4.5 V 1 100 mV
I
OH
= 4 mA V
CC
= 4.5 V 145 300 mV
I
IH
High level input current V
CC
= 5.5 V V
I
= V
CC
1 100 nA
I
IL
Low level input current V
CC
= 5.5 V V
I
= 0 -1 -100 nA
I
CC
Logic supply current
V
CC
= 5.5 V All outputs OFF
or ON
23 40 μA
I
CC(FRQ)
Logic supply current at
frequency
f
SRCK
= 5 MHz C
L
= 30 pF
All outputs OFF
(See Figure 6,
(1)
)
1. Not tested, specified by design
70 250 μA
I
N
Nominal current
V
DS(on)
= 0.5 VI
N
= I
D
T
C
= 85 °C
(See Note 4, Note 5, Note 6)
(1)
120 200 mA
I
DSX
Off-state drain current
V
DS
= 20 V V
CC
= 5.5 V or 0 V 0.02 1 μA
V
DS
= 20 V V
CC
= 5.5 V or 0 V
T
C
= 125 °C
0.5 1 μA
R
DS(on)
Static drain source on
state resistance
(See Note 4, and
Note 5)
I
D
= 50 mA V
CC
= 4.5 V 3.4 4 Ω
I
D
= 50 mA V
CC
= 4.5 V
T
C
= 125 °C
4.8 6 Ω
I
D
= 100 mA V
CC
= 4.5 V 3.5 6 Ω

STPIC6D595MTR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Counter Shift Registers Power logic 8-BIT
Lifecycle:
New from this manufacturer.
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