STPIC6D595 Electrical characteristics
Doc ID 13663 Rev 3 7/21
3.2 Switching characteristics
V
CC
= 5 V, T
C
= 25 °C, unless otherwise specified.
Note: 1 All voltage value are with respect to GND
2 Each power DMOS source is internally connected to GND
3 Pulse duration
≤
100
μ
s and duty cycle
≤
2%
4 Technique should limit T
J
- T
C
to 10 °C maximum
5 These parameters are measured with voltage sensing contacts separate from the current-
carrying contacts.
6 Nominal Current is defined for a consistent comparison between devices from different
sources. It is the current that produces a voltage drop of 0.5 V at T
C
= 85 °C.
Table 6. Switching characteristics
Symbol Parameter Test conditions Min Typ Max Unit
t
PHL
Propagation delay time, high
to low level output from G
C
L
= 30 pF I
D
= 75 mA
(See Figure 4,
Figure 5, Figure 6,
Figure 7,)
-1930ns
t
PLH
Propagation delay time, low
to high level output from G
-4670ns
t
PHL-SDO
Propagation delay time, clock
to SDO
-1925ns
t
PLH-SDO
Propagation delay time, clock
to SDO
-4660ns
t
PLH-R_O
Propagation delay low to high
level RCK to OUT
-6290ns
t
PHL-R_O
Propagation delay high to low
level RCK to OUT
-1318ns
t
PLH-S_SO
Propagation delay low to high
level SCK to SDO
-1420ns
t
PHL-S_SO
Propagation delay high to low
level SCK to SDO
-1420ns
t
r
Rise time, drain output - 20 30 ns
t
f
Fall time, drain output - 15 20 ns
