IRG8CH106K10F
2
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Submit Datasheet Feedback June 4, 2015
Static Characteristics (Tested on wafers) @ T
J
=25°C
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 ––– –––
V
V
GE
= 0V, I
C
= 250µA
V
CE(sat)
Collector-to-Emitter Saturated Voltage ––– ––– 2.0 V
GE
= 15V, I
C
= 110A, T
J
= 25°C
V
GE(th)
Gate-Emitter Threshold Voltage 5.0 ––– 6.5 I
C
= 4.0mA , V
GE
= V
CE
I
CES
Zero Gate Voltage Collector Current ––– 1.0 35 µA V
CE
= 1200V, V
GE
= 0V
I
GES
Gate Emitter Leakage Current ––– ––– ±600 nA V
CE
= 0V, V
GE
= ±30V
R
G INTERNAL
Internal Gate Resistance 1.6 2.0 2.4
Electrical Characteristics (Not subject to production test- Verified by design/characterization)
Parameter Min. Typ. Max. Units Conditions
V
CE(sat)
Collector-to-Emitter Saturated Voltage ––– 1.7 –––
V
V
GE
= 15V, I
C
= 110A , T
J
= 25°C
––– 2.1 ––– V
GE
= 15V, I
C
= 110A , T
J
= 175°C
SCSOA Short Circuit Safe Operating Area 10 ––– –––
µs
V
GE
= 15V, V
CC
= 600V
V
P
≤ 1200V,T
J
= 150°C
RBSOA Reverse Bias Safe Operating Area
T
J
= 175°C, I
C
= 330A
V
CC
= 960V, Vp 1200V
V
GE
= +20V to 0V
C
iss
Input Capacitance ––– 11550 –––
pF
V
GE
= 0V
C
oss
Output Capacitance ––– 450 –––
V
CE
= 30V
C
rss
Reverse Transfer Capacitance ––– 340 –––
ƒ = 1.0MHz
Q
g
Total Gate Charge (turn-on) — 700 —
nC
I
C
= 110A
Q
ge
Gate-to-Emitter Charge (turn-on) — 40 —
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 410 —
V
CC
= 600V
Switching Characteristics (Inductive Load-Not subject to production test-Verified by design/characterization)
Parameter Min. Typ. Max. Units Conditions
t
d(on)
Turn-On delay time — 80 —
ns
I
C
= 110A, V
CC
= 600V
t
r
Rise time — 30 —
R
G
= 1.0, V
GE
= 15V
t
d(off)
Turn-Off delay time — 380 —
T
J
= 25°C
t
f
Fall time — 110 —
t
d(on)
Turn-On delay time — 80 — I
C
= 110A, V
CC
= 600V
t
r
Rise time — 30 —
R
G
= 1.0, V
GE
= 15V
t
d(off)
Turn-Off delay time — 470 —
T
J
= 150°C
t
f
Fall time — 310 —
FULL SQUARE
Parameter Max. Units
V
CE
Collector-Emitter Voltage, T
J
=25°C 1200 V
I
C
DC Collector Current
A
I
LM
Clamped Inductive Load Current 330 A
V
GE
Gate Emitter Voltage ± 30 V
T
J
, T
STG
Operating Junction and Storage Temperature -40 to +175 °C
Maximum Ratings
Notes:
The current in the application is limited by T
JMax
and the thermal properties of the assembly.
V
CC
= 80% (V
CES
), V
GE
= 20V.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Actual test limits take into account additional losses in the measurement setup.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Values influenced by parasitic L and C in measurement.
