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ADG849YKSZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P13
ADG849
Rev. 0| Page 3 of 12
SPECIFICATIONS
Table 1. V
DD
= 4.5 V to 5.5 V, GND = 0 V
1
Parameter +25°C
–40°C to
+85°C
–40°C to
+125°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On-Resistance (R
ON
) 0.5 Ω typ
V
S
= 0 V to V
DD
, I
DS
= –100 mA
0.6 0.7 0.8 Ω max See Figure 15
On-Resistance Match Between Channels
(∆R
ON
)
0.05
Ω typ
V
S
= 0.85 V, I
DS
= –100 mA
0.095 0.11 0.125 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 0.13 Ω typ
V
S
= 0 V to V
DD
, I
DS
= –100 mA
0.18 0.22 0.24 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source Off Leakage, I
S
(Off) ±0.01 nA typ
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V,
see Figure 16
Channel On Leakage, I
D
, I
S
(On) ±0.04 nA typ
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V,
see Figure 17
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
C
IN
, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
11 ns typ R
L
= 50 Ω, C
L
= 35 pF
15 17 18 ns max V
S
= 3 V, see Figure 18
t
OFF
9 ns typ R
L
= 50 Ω, C
L
= 35 pF
13 14 15 ns max V
S
= 3 V, see Figure 18
Break-Before-Make Time Delay, t
BBM
5 ns typ
R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3 V,
see Figure 19
1 ns min
Charge Injection 50 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 20
Off Isolation –64 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB 38 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 23
Insertion Loss 0.04 dB typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 23
THD + N 0.01 %
R
L
= 32 Ω, f = 20 Hz to 20 kHz,
Vs = 2 V p-p
C
S
(Off) 52 pF typ
C
D
, C
S
(On) 145 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V, Digital Inputs = 0 V or 5.5 V
I
DD
0.001 µA typ
1.0 µA max
1
The temperature range for the Y version is –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
ADG849
Rev. 0| Page 4 of 12
Table 2. V
DD
= 2.7 V to 3.6 V, GND = 0 V
1
Parameter +25°C
–40°C to
+85°C
–40°C to
+125°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On-Resistance (R
ON
) 0.72 Ω typ V
S
= 0 V to V
DD
, I
DS
= –100 mA
1.1 1.1 1.2 Ω max See Figure 15
On-Resistance Match Between Channels
(∆R
ON
)
0.05
Ω typ V
S
= 1.5 V, I
DS
= –100 mA
0.095 0.11 0.125 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 0.3 Ω typ V
S
= 0 V to V
DD
, I
DS
= –100 mA
LEAKAGE CURRENTS V
DD
= 3.6 V
Source Off Leakage, I
S
(Off) ±0.1 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V, see Figure 16
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ
V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V;
see Figure 17
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max V
DD
= 3 V to 3.6 V
0.7 V max V
DD
= 2.7 V
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 µA max
C
IN
, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
16 ns typ R
L
= 50 Ω, C
L
= 35 pF
22 24 26 ns max V
S
= 1.5 V, see Figure 18
t
OFF
13 ns typ R
L
= 50 Ω, C
L
= 35 pF
18 20 22 ns max V
S
= 1.5 V, see Figure 18
Break-Before-Make Time Delay, t
BBM
7 ns typ
R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 1.5 V,
see Figure 19
1 ns min
Charge Injection 30 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 20
Off Isolation –64 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz,
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB 38 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 23
Insertion Loss 0.04 dB typ R
L
= 50 Ω C
L
= 5 pF, see Figure 23
THD + N 0.02 %
R
L
= 32 Ω, f = 20 Hz to 20 kHz,
Vs = 1 V p-p
C
S
(Off) 55 pF typ f = 1 MHz
C
D
, C
S
(On) 147 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.6 V
Digital Inputs = 0 V or 3.6 V
I
DD
0.001 µA typ
1.0 µA max
1
The temperature range for the Y version is –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
ADG849
Rev. 0| Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 3. T
A
= 25°C, unless otherwise noted
Parameter Rating
V
DD
to GND –0.3 V to +7 V
Analog Inputs
1
–0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Digital Inputs
1
–0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D
600 mA (pulsed at 1 ms,
10% duty cycle maximum)
Continuous Current, S or D 400 mA
Operating Temperature Range
Extended –40°C to +125°C
Storage Temperature Range –65°C to +150°C
Junction Temperature +150°C
SC70 Package
θ
JA
Thermal Impedance 332°C/W
θ
JC
Thermal Impedance 120°C/W
Reflow Soldering
Peak Temperature 260(0/–5)°C
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Table 4. Truth Table
IN Switch S1 Switch S2
0 On Off
1 Off On
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
P1-P3P4-P6P7-P9P10-P12P13-P13

ADG849YKSZ-REEL7

Mfr. #:
Buy ADG849YKSZ-REEL7
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 700mOhm 5.5V CMOS SPDT
Lifecycle:
New from this manufacturer.
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