IRLBA1304P

P1-P3 P4-P6 P7-P8

IRLBA1304

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

2000

4000

6000

8000

10000

12000

V , Drain-to-Source Volta

g

e (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GS

iss

g

s

g

d , ds

rss

g

d

oss ds

g

d

C

iss

C

oss

C

rss

0 40 80 120 160 200

0

3

6

9

12

15

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

110A

V = 8V

DS

V = 20V

DS

V = 32V

DS

10

100

1000

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V ,Source-to-Drain Volta

g

e (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

10

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Volta

g

e (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

IRLBA1304

www.irf.com 5

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

4.5V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

0

40

80

120

160

200

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLBA1304

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

4.5 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150 175

0

500

1000

1500

2000

2500

3000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

41A

71A

100A

P1-P3 P4-P6 P7-P8

IRLBA1304P

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 40V 185A SUPER-220

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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