IRLBA1304P

IRLBA1304
www.irf.com 7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRLBA1304
8 www.irf.com
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http://www.irf.com/ Data and specifications subject to change without notice. 9/99
Super-220 Package Outline

IRLBA1304P

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 185A SUPER-220
Lifecycle:
New from this manufacturer.
Delivery:
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