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VNP49N04

P1-P3P4-P6P7-P9P10-P11
VNP49N04
OMNIFET :
FULLY AUTOPROTECTED POWER MOSFET
March 2004
1
2
3
TO-220
BLOCK DIAGRAM
TYPE V
clamp
R
DS(on)
I
lim
VNP49N04 42 V 0.02 W 49 A
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORTCIRCUIT PROTECTION
■ INTEGRATEDCLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGHINPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
■ STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP49N04 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limita-
tion and overvoltage clamp protect the chip in
harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
1/11
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
in
= 0) Internally Clamped V
V
in
Input Voltage 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Current -50 A
V
esd
Electrostatic Discharge (C= 100 pF, R=1.5 KW) 2000 V
P
tot
Total Dissipation at T
c
=25
o
C 125 W
T
j
Operating Junction Temperature Internally Limited
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
Storage Temperature -55 to 150
o
C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
=25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0 36 42 48 V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
=2mA V
in
=0 35 V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
=-1mA -1 -0.3 V
I
DSS
Zero Input Voltage
Drain Current (V
in
=0)
V
DS
=13V V
in
=0
V
DS
=25V V
in
=0
50
200
mA
mA
I
ISS
Supply Current from
Input Pin
V
DS
=0V V
in
= 10 V 250 500 mA
ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IN(th)
Input Threshold
Voltage
V
DS
=V
in
I
D
+I
in
=1mA 0.8 3 V
R
DS(on)
Static Drain-source On
Resistance
V
in
=10V I
D
=25A
V
in
=5V I
D
=25A
0.02
0.025
W
W
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(*)Forward
Transconductance
V
DS
=13V I
D
=25A 25 30 S
C
oss
Output Capacitance V
DS
=13V f=1MHz V
in
= 0 1100 1500 pF
VNP49N04
2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (**)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V I
d
=25A
V
gen
=10V R
gen
=10W
(see figure 3)
200
1300
800
300
300
1800
1200
450
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V I
d
=25A
V
gen
=10V R
gen
= 1000 W
(see figure 3)
1.3
3.8
12
6.1
1.9
5.2
14
8.5
ms
ms
ms
ms
(di/dt)
on
Turn-on Current Slope V
DD
=15V I
D
=25A
V
in
=10V R
gen
=10W
25 A/ms
Q
i
Total Input Charge V
DD
=15V I
D
=25A V
in
= 10 V 100 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
(*)ForwardOnVoltage I
SD
=25A V
in
=0 1.6 V
t
rr
(**)
Q
rr
(**)
I
RRM
(**)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 25 A di/dt = 100 A/ms
V
DD
=30V T
j
=25
o
C
(see test circuit, figure 5)
250
910
7.5
ns
nC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
=10V V
DS
=13V
V
in
=5V V
DS
=13V
30
30
49
49
68
68
A
A
t
dlim
(**) Step Response
Current Limit
V
in
=10V
V
in
=5V
35
90
50
150
ms
ms
T
jsh
(**) Overtemperature
Shutdown
150
o
C
T
jrs
(**) Overtemperature Reset 135
o
C
I
gf
(**) Fault Sink Current V
in
=10V V
DS
=13V
V
in
=5V V
DS
=13V
50
20
mA
mA
E
as
(**) Single Pulse
Avalanche Energy
starting T
j
=25
o
CV
DD
=20V
V
in
=10V R
gen
=1KW L=6mH
4J
(*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**) Parameters guaranteed by design/characterization
VNP49N04
3/11
P1-P3P4-P6P7-P9P10-P11

VNP49N04

Mfr. #:
Buy VNP49N04
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 42V 49A OmniFET
Lifecycle:
New from this manufacturer.
Delivery:
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